Semiconductor storage unit, process for manufacturing the same, and method of forming package resin
A technology for storage devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as inability to reduce thermal impact, inability to completely eliminate ferroelectric capacitor characteristics, degradation, etc., to achieve High reliability, ensuring reliability, and reducing the effect of memory characteristic deterioration
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 approach 》
[0066] Figure 17 as well as Figure 18 The outline of the manufacturing process of the FeRAM according to the first embodiment of the present invention is shown. Figure 17 It is a flowchart showing the steps up to forming the opening of the pad electrode. First, a transistor layer (S1) is formed on a semiconductor substrate (also referred to as a wafer).
[0067] Next, an interlayer insulating film is formed (S2). Then, a ferroelectric capacitor is formed. A ferroelectric capacitor consists of a lower electrode (such as Pt), a dielectric film (such as PZT), an upper electrode (such as IrO 2 ). Furthermore, a hydrogen / moisture barrier film (Al 2 o 3 ) (S3).
[0068] Next, an interlayer insulating film is formed on the upper layer of the ferroelectric capacitor, and a tungsten plug layer connected to the upper layer of the wiring layer is formed ( S4 ). Further, a first wiring layer connected to the plug layer is formed. For example, the first wiring layer is formed ...
no. 1 example
[0083] Below, based on Figure 2A ~ Figure 16B , the first embodiment of the present invention will be described. Figure 2A is a diagram showing a process of forming a transistor in the lowest layer of the FeRAM device. First, an element isolation region 12 for dividing an element region is formed on a semiconductor substrate 10 made of silicon or the like. Next, well 13 is formed by implanting impurities in semiconductor substrate 10 in which element isolation region 12 is formed. On the semiconductor substrate 10 in which the well 13 is formed, a gate electrode 15 is formed via a gate insulating film (not shown). Furthermore, a sidewall insulating film 16 is formed on the sidewall portion of the gate electrode 15 . On both sides of the gate electrode 15 on which the sidewall insulating film 16 is formed, a source / drain diffusion layer 17 is formed.
[0084] Figure 2B A step of forming an interlayer insulating film is shown. Here, an interlayer insulating film P (plas...
no. 2 approach 》
[0121] Figure 19 An overview of FeRAM and its manufacturing process according to the second embodiment is shown. In the above-mentioned first embodiment, at least one barrier film for blocking hydrogen and moisture is formed on the upper layer of the ferroelectric capacitor, and then in a nitrogen atmosphere, the The curing temperature forms a film of novolak resin as a passivation film (cover film). In this embodiment, an oxygen barrier film is formed on the upper layer of the passivation film containing this novolak resin. Other steps of this embodiment are the same as those of the first embodiment. Therefore, the description of the steps up to the formation of the novolak resin is omitted. Thus, in Figure 19 In the case of the first embodiment, the steps up to step S13 ( Figure 17 )same. In addition, in Figure 19 , steps S1-S6 are omitted.
[0122] That is, in the present embodiment, after the novolak resin is heat-treated (S13), the oxygen barrier film is forme...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More