Method and device thereof for linearly cutting silicon slice

Abstract

The invention discloses a method and a device thereof for linearly cutting a silicon slice. By repeatedly and sequentially winding a steel wire on two or four guide wheels provided with wire casings, a steel wire gauze is formed, and a monocrystalline silicon rod is processed by ground finish. By utilizing the principle that the diameter of the steel wire becomes smaller and smaller along with the abrasion in a cutting process, a method that the steel wire which is winded on the guide wheel is sequentially and gradually thickened when winded on the guide wheel is adopted, so that the monocrystalline silicon rod can be processed by ground finish; and to this end, the slotting pitches of the guide wheel are changed to be unequal, and the unequal slotting pitches are sequentially reduced along the length direction of the guide wheel from the beginning that the steel wire is winded on the guide wheel, so that the gradual thickening degree of the steel wire gauze can compensate the increased thickness of the cut silicon slice caused by the reduced diameter of the steel wire after abrasion, and the monocrystalline silicon rod is cut into hundreds of completely identical silicon slices by cutters time after time. Under the circumstance that the slotting length of the invention is identical with the existing slotting length of the guide wheel, the quantity of the cut silicon slices isincreased correspondingly, thereby enabling the economic benefit to be outstanding.

Description

technical field [0001] The invention relates to a silicon single crystal rod slicing process, in particular to a silicon slice wire cutting method and a device thereof which adopt a wire cutting system to process silicon slices. Background technique [0002] At present, most of the small-diameter silicon single crystal rods are still cut by an internal slicer. Its blade is inlaid on the inner circumference of the circular thin metal substrate, and the outer circle of the blade is fixed on the rotating shaft. Compared with the outer circular blade slicer adopted in the early stage, it can use a thinner blade (according to the diameter of the required processing, the appropriate cutter head and blade are selected, for example, cutting a silicon single crystal rod with a diameter of 200mm requires a 34in cutter head, the thickness of the blade is about 380μm, and the thickness of the metal substrate of the knife is less than 200μm), so it can cut thinner wafers with relatively ...

AI Technical Summary

Problems solved by technology

Due to the reduction of the diameter of the steel wire, the loss of the slit becomes smaller, and the less cut part is added to the thickness of the slice. Compared with the slice, the thickness of the slice must gradually decrease with the gradual reduction of the wire diameter increase, because the slit becomes smaller, the saved material is not used, but is wasted on the thickness of the slice, and the thickness of each slice cut by one knife is not the same, and there is a large thickness deviation

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