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NMOS power switch pipe drive circuit adopting starting strap circuit

A power switch tube and drive circuit technology, applied in the field of electronics, to achieve the effects of reducing loss, reducing forward conduction resistance and voltage drop, and reducing loss

Inactive Publication Date: 2011-07-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is deceptively simple, but requires two power supplies

Method used

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  • NMOS power switch pipe drive circuit adopting starting strap circuit
  • NMOS power switch pipe drive circuit adopting starting strap circuit
  • NMOS power switch pipe drive circuit adopting starting strap circuit

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0025] Such as figure 1 As shown, a part of the power switch tube drive circuit is generally packaged inside the chip, and the other part is located outside the chip. The structure of the NMOS power switch tube drive circuit based on the start-up band circuit in this embodiment consists of an inductor L outside the chip, a second capacitor C L , load resistance R L , Schottky diode and the first capacitor C BS , and the internal circuit module of the chip. Among them, the power first NMOS transistor M inside the chip 1 and off-chip Schottky diodes constitute the power switch tubes of the high voltage and low voltage sides respectively.

[0026] The first PMOS transistor P 1 The drain is externally driven by V DD_5v .

[0027] The first PMOS transistor P 1 Both the substrate and the source are connected to the first capacitor C BS the first extreme, the first capacitor C BS The second extreme of the first NMOS transistor M 1 source.

[0028] The first PMOS transisto...

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PUM

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Abstract

The invention discloses a power switch pipe drive circuit adopting a starting strap circuit, comprising a high-voltage side power switch pipe, a low-voltage side power switch pipe and a starting strap circuit, wherein the high-voltage side power switch pipe is provided with a first NMOS pipe; the low-voltage side power switch pipe is provided with a Schottky diode, and the starting strap circuit is used for driving the first NMOS pipe. The power switch pipe drive circuit is characterized in that the starting strap circuit comprises a first PMOS pipe and a first capacitor, wherein a drain electrode of the first PMOS pipe is externally connected with drive voltage; both a lining electrode and a source electrode of the first PMOS pipe are connected to the first electrode end of the first capacitor; and the second electrode end of the first capacitor is connected with a source electrode of the NMOS pipe. The power switch pipe drive circuit provides higher NMOS pipe grid-source voltage, reduces the conducting resistance of the NMOS power switch pipe and lowers the loss of output voltage. In addition, the original diode is replaced by the PMOS pipe in the starting strap circuit, the positive conducting resistance and the pressure drop are lowered, and the loss is reduced.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a drive circuit for a power switch tube, which is mainly used for a drive circuit of a synchronously controlled DC voltage conversion controller (DC-DC). Background technique [0002] With the widespread use of portable electronic devices, direct current voltage conversion controller (DC-DC) chips have also been developed rapidly. The requirements for DC power conversion efficiency of DC-DC chips are also getting higher and higher. The switching power supply control mode is the mainstream control mode of the DC-DC chip, and its main power loss comes from the loss of the power switch tube. [0003] In a synchronously controlled DC-DC chip, an NMOS tube is usually selected as a power switch tube on the high voltage side, and a Schottky diode is generally used as a switch tube on the low voltage side. If the gate control voltage GT of the NMOS power transistor is the same as t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0185H02M1/08
Inventor 何乐年邱建平叶益迭宁志华
Owner ZHEJIANG UNIV