Manufacturing method for protecting interval wall of bipolar transistor circuit

Abstract

The invention relates to a manufacturing method for protecting the interval wall of a bipolar transistor circuit. The bipolar transistor circuit and the gate electrode circuit of an MOS transistor are arranged on the same substrate, and is characterized by comprising the following steps: the first step: depositing a layer of interval-wall material on the substrate; the second step: etching the interval-wall material layer dryly until a thin layer with preset thickness is left; and the third step: etching the thin layer wetly until the bipolar transistor circuit is exposed out. The manufacturing method for protecting the interval wall of the bipolar transistor circuit has the advantages of considering the integrity of the surface of the silicon substrate when removing excessive interval-wall material, improving junction leakage current and increasing the current gain beta of BJT.

Description

technical field [0001] The invention relates to a method for manufacturing an integrated circuit (IC), in particular to a method for manufacturing a spacer for protecting a bipolar transistor circuit. Background technique [0002] In the current complementary metal oxide semiconductor (CMOS) manufacturing technology, the spacer process is a common method to solve the hot carrier effect on the MOS transistor. (BJT) causing serious junction leakage current. [0003] A typical spacer process is first to fully deposit a spacer material layer 12 on a silicon substrate 14 with a gate electrode 10, such as tetraethoxysilane (Tetra-Ethyl-Ortho-Silicate; TEOS), such as figure 1 as shown, figure 1 It is a schematic diagram of a known spacer process; then the spacer material layer 12 is etched by a dry etching process; figure 2 the spacer wall 16, figure 2 It is another schematic diagram of a known spacer process. It is known that the spacer process will prolong the dry etching ...

AI Technical Summary

Problems solved by technology

It is known that the spacer process will prolong the dry etching time to ensure that the gate circuit 10 and the spacer material on the surface 18 of the silicon substrate can be etched clean, but the selectivity ratio of dry etching to TEOS 12 and silicon substrate 14 is very poor , tends to damage the silicon substrate surface 18 while etching the TEOS 12

[0004] image 3 It is a schematic diagram of the damage caused by the known spacer process to the BJT. When the damage to the surface of the silicon substrate caused by the aforementioned spacer process occurs at the p-n junction of the BJT28, for example, at the emitter 24 and the base 22 of the BJT28, or between the collector 20 and the When a defect 25 is formed between the bases 22, the junction leakage current will be caused at these junctions

Since the base current provided to the BJT is generally only a few μA, and the junction leakage current caused by surface defects can usually reach the level of μA, the current gain β of the BJT 28 becomes very low

[0005] Therefore, there are above-mentioned inconveniences and problems in the known spacer process.

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