Semiconductor arrangement with trench capacitor and method for production thereof

A technology of semiconductors and capacitors, applied in semiconductor/solid-state device manufacturing, capacitors, semiconductor devices, etc., to achieve the effect of small size and good buffer performance

Active Publication Date: 2010-01-27
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The solution indicated in this document has the disadvantage that trenches can only be integrated in a limited way without causing a weakening of the substrate

Method used

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  • Semiconductor arrangement with trench capacitor and method for production thereof
  • Semiconductor arrangement with trench capacitor and method for production thereof
  • Semiconductor arrangement with trench capacitor and method for production thereof

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Embodiment Construction

[0046] figure 1 A detail of an embodiment of a semiconductor device according to the invention is shown in cross-section. The semiconductor arrangement comprises a substrate 1 on the front side of which an integrated circuit 2 is arranged. On the back side of the substrate 1 is a capacitor made up of several layers (layers 4 to 8 ). The layered capacitor 20 is thus arranged along the rear surface of the substrate 1 which has a deep structure with trenches 3 . Here, the capacitor 20 with substrate is designed as a single-depth structure.

[0047] To produce capacitor 20 , at least one trench 3 is first introduced into substrate 1 from the rear. A passivation layer 4 is arranged directly on the rear surface of the substrate 1 with the trench 3 . The passivation layer is arranged along the flat surface 33 on the back side of the substrate 1 and the upstanding walls 31 and 32 of the trench 3 and also along the flat surface 34 of the substrate 1 outside the trench.

[0048] A ...

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PUM

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Abstract

The invention relates to a semiconductor arrangement and method for production thereof, wherein the semiconductor arrangement is provided with an integrated circuit (2) arranged on a substrate (1). The integrated circuit (2) is structured on the front face of the substrate and at least one capacitor (20) is connected to the integrated circuit, characterised in that the at least one capacitor is designed as a monolithic deep structure in trenches (3). The trenches are arranged in at least one first group and at least one second group, the trenches of a group running essentially parallel to each other and the first and second group are at an angle to each other, essentially at right angles to each other.

Description

technical field [0001] The invention relates to a semiconductor arrangement according to the preambles of the independent claims, and also to a method for producing such a semiconductor arrangement. Background technique [0002] With regard to electronic equipment, so-called back-up capacitors or snubber capacitors are often applied, which most likely need to be placed close to certain components and whose task is to filter short current pulses in the power supply line. These backup capacitors are common to integrated circuits in particular, and may be indispensable. [0003] Thus, for example, with synchronous cycles of processors and other logic circuits there may periodically be very high current peaks in which internal transistors are on simultaneously. If the power supply near this part is not buffered, this current pulse will cause a high voltage drop on the power supply line according to Ohm's law. This can lead to a brief breakdown of the operating voltage, which m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/334H01L27/06H01L29/94
CPCH01L29/945H01L27/0805H01L27/0694H01L28/60H01L29/66181
Inventor N·马伦科
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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