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Preparation method of ultra-pure aluminum ultrafine grain sputtering target

A technology of ultra-fine grains and sputtering targets, which is applied in sputtering plating, metal material coating process, ion implantation plating, etc., and can solve the problems of slow recrystallization process, difficult refinement, difficult materials, etc. Achieve the effects of large deformation, increased deformation, uniform and fine grain shape

Inactive Publication Date: 2010-02-03
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to severe grain fibrosis and slow heat treatment recrystallization process, it is very difficult to obtain uniform equiaxed fine grain target materials only by equal channel extrusion
Especially when the purity of the material exceeds 5N, the temperature rise in the processing process will also cause recrystallization of the grains, making it difficult to refine

Method used

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  • Preparation method of ultra-pure aluminum ultrafine grain sputtering target
  • Preparation method of ultra-pure aluminum ultrafine grain sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0027] Example 2: Using the same steps as in Example 1, when equal-channel extrusion is carried out for 8 passes, deep subcooling is performed to -50°C, and rolling is performed for 8 passes, the final ultra-high-purity aluminum target grains obtained The size can reach below 200μm.

Embodiment 3

[0028] Example 3: Using the same steps as in Example 1, when 15 passes of equal channel extrusion, deep supercooling treatment to -80°C, and 15 passes of rolling, the final ultra-high-purity aluminum target grains obtained The size can reach below 100μm.

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Abstract

The invention discloses a preparation method of ultra-pure aluminum ultrafine grain sputtering target, belonging to the technical field of metal material processing. The preparation method comprises:putting an ultra-pure aluminum board into an equal channel angular extruding module for extrusion for 3-15 passes; performing deep undercooled processing to extruded ultra-pure aluminum board in liquid nitrogen at the deep undercooled temperature of minus 80 to minus 10 DEG C; rolling the deep undercooled ultra-pure aluminum board for 3-15 passes. The invention combines equal channel pressing, deep undercooled processing and rolling to fully utilize the characteristic of large extruded deformation amount so as to greatly improve the deformation amount of the ultra-pure aluminum board. The invention utilizes dynamic recrystallization in the deep undercooled inhabitation rolling process and utilizes vertical rolling to change fibroid grain tissue produced by extrusion, and finally, grain shape changes to be even and small as well as easy to be equiaxial.

Description

technical field [0001] The invention relates to a preparation method in the technical field of metal material processing, in particular to a preparation method for an ultra-high-purity aluminum ultra-fine grain sputtering target. Background technique [0002] Physical vapor deposition (PVD) is one of the most critical processes in the production process of semiconductor chips and TFT-LCD. The sputtering metal target for PVD is one of the most important raw materials in the process of semiconductor chip production and TFT-LCD preparation and processing. The largest amount of shot metal targets are ultra-high-purity aluminum and ultra-high-purity aluminum alloy targets. The purity of the ultra-high-purity aluminum and the ultra-high-purity aluminum alloy aluminum matrix is ​​5N<Al%<6N, wherein the radioactive element U+Th<1ppb, and the total amount of metal impurity elements is greater than 1ppm but less than 10ppm. According to the principle of sputtering process, t...

Claims

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Application Information

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IPC IPC(8): C22F1/04C23C14/34C23C14/14
Inventor 张佼程健东青赵国刚李明泽疏达戴永兵孙宝德王俊
Owner SHANGHAI JIAO TONG UNIV
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