Method for manufacturing source electrode and drain electrode in flash memory

Abstract

The invention discloses a method for manufacturing a source electrode and a drain electrode in a flash memory, which comprises the following steps of: providing a semiconductor substrate; injecting first ions; forming a barrier layer on the surfaces of the semiconductor substrate and first type and second type of grid structures respectively; etching the barrier layers until the barrier layers between adjacent second type of grid structures are removed so as to expose the surface of the semiconductor substrate; injecting second ions and supplementing and doping in the semiconductor substrate exposed between the adjacent second type of grid structures so as to independent supplemented and doped source electrode and drain electrode; and removing the residual part of the barrier layers. The method has an advantage of meeting different requirements on doping concentrations of manufacturing of shared source electrodes and drain electrodes between adjacent first type of grid structures and between first type and second type of grid structures and the manufacturing of other independent source electrodes and drain electrodes in the flash memory by injecting ions for two times, thereby stabilizing the work current of the flash memory and ensuring the work efficiency of the flash memory.

Description

【Technical field】 [0001] The invention relates to a process of a semiconductor device, in particular to a manufacturing method of a source electrode and a drain electrode in a flash memory. 【Background technique】 [0002] Flash memory, as a non-volatile memory device, is characterized by its ability to retain stored information regardless of whether power is supplied to the device. Unlike read-only memory (ROM), another type of non-volatile memory device, flash memory devices have the property of rapidly and easily changing stored information. [0003] The chip structure of the flash memory usually includes a storage unit for storing data and a control unit adjacent to the storage module for controlling the operation of the storage unit. The memory cell includes a storage gate and a source and a drain located on both sides of the storage gate to implement functions such as storage, reading and release of charges. The control unit has a control gate which can control the on...

AI Technical Summary

Problems solved by technology

However, light dose doping will lead to insufficient source and drain doping doses in the control unit, resulting in a reduction in the operating current of the flash memory, which will affect the work efficiency of the flash memory chip, especially when the flash memory is repeatedly used for hundreds of thousands of When more than one time, the reduction of operating current has a particularly significant impact on the efficiency of the flash memory chip

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