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Vacuum treating apparatus, method of operating the same and recording medium

A technology of vacuum processing device and operation method, which is applied in the directions of transportation and packaging, electrical components, semiconductor/solid-state device manufacturing, etc., and can solve problems such as pressure difference of inert gas, increased cost, and non-flow direction of inert gas

Inactive Publication Date: 2010-02-17
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as mentioned above, since the transfer chamber is also exhausted, even if a pressure difference is formed, the inert gas may flow to the exhaust port, and the inert gas may not flow to the transfer port of the processing container, so that the gas from the processing container When gas diffusion cannot be sufficiently suppressed
Although it is conceivable to further increase the pressure of the transfer chamber, this will increase the consumption of inert gas and increase the cost
Furthermore, there are also cases where the pressure in the transfer chamber is set in the transition area or molecular flow area where the inert gas changes from viscous flow to molecular flow, and the inert gas is difficult to flow due to the pressure difference. The problem of the diffusion of gas in the container

Method used

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  • Vacuum treating apparatus, method of operating the same and recording medium
  • Vacuum treating apparatus, method of operating the same and recording medium
  • Vacuum treating apparatus, method of operating the same and recording medium

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no. 1 approach

[0041] refer to figure 1 The structure of the semiconductor manufacturing apparatus 1 to which the vacuum processing apparatus of this invention is applied is demonstrated. The semiconductor manufacturing apparatus 1 as a vacuum processing apparatus has: a first transfer chamber 12 constituting a loading module for loading and unloading a wafer W as a substrate; load lock chambers 13, 13; a second transfer chamber 21; And the plurality of CVD modules 3 connected to the second transfer chamber 21 through the lock chamber 5 and each including a processing container 30 . The wafer W is transported to the semiconductor manufacturing apparatus in a state of being accommodated in a sealed carrier C including a plurality of wafers W, for example, 25 wafers. On the front of the first transfer chamber 12, a loading boat 11 for loading the carrier C is provided, and the front wall of the first transfer chamber 12 is connected with the carrier C placed on the above-mentioned loading bo...

no. 2 approach

[0073] Next, refer to Figure 8 Another embodiment of the semiconductor manufacturing apparatus will be described. This semiconductor manufacturing apparatus is configured in the same manner as the aforementioned semiconductor manufacturing apparatus 1 except that the lock chamber 7 is provided instead of the lock chamber 5 . The difference between the lock chamber 7 and the lock chamber 5 is that the gate valve for opening and closing the transfer port 38 and the gate valve for opening and closing the exhaust port 53 are configured as different gate valves 71 and 72 , respectively. The gate valve 71 and the gate valve 72 are formed in a rectangular shape corresponding to the transfer port 38 and the exhaust port 53, respectively. connect. Further, the drive units 75 and 76 slide the gate valves 71 and 72 independently in the up and down directions, and make the back surfaces of the gate valves 71 and 72 come into close contact with the outer wall of the processing container...

no. 3 approach

[0079] Next, refer to Figure 10 Another embodiment of the semiconductor manufacturing apparatus will be described. The difference between the semiconductor manufacturing apparatus of the third embodiment and the semiconductor manufacturing apparatus 1 of the first embodiment is that the gas nozzle 61 is not provided in the lock chamber 5 . As another point of difference, the gas supply path 24A is not connected to the bottom surface of the box 20 , but is connected to a gas nozzle (transfer chamber inert gas supply unit) 66 provided at the top center of the second transfer chamber 21 . The gas nozzle 66 is configured, for example, in the same manner as the gas nozzle 61, and supplies N 2 gas. In addition, the exhaust port (transfer chamber exhaust port) 27 is not provided on the side wall of the box body 20, but is opened at a position near the center of the bottom surface of the second transfer chamber 21 that does not affect the passage of the second transfer mechanism 23...

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Abstract

In a vacuum treating apparatus including a treating vessel with delivery port adapted to have a vacuum atmosphere and perform treatment by a treating gas and a delivery chamber with vacuum atmosphereconnected via a gate chamber to the delivery port of the treating vessel and equipped with delivery means for the pass and receipt of substrate, any diffusion of gas remaining in the treating vessel into the delivery chamber is suppressed. The vacuum treating apparatus comprises the treating vessel, the delivery chamber and a gate valve provided in the gate chamber so that the delivery port is closed when the substrate is treated in the treating vessel while the delivery port is opened when the pass and receipt of substrate for the treating vessel are carried out. In order to suppress any diffusion of gas remaining in the treating vessel into the delivery chamber, the gate chamber is furnished, at its position facing the delivery port, with a gate chamber inert gas supply part and a gate chamber exhaust port adapted to produce a stream of inert gas. This suppresses any diffusion of gas remaining in the treating vessel through the delivery port into the delivery chamber.

Description

technical field [0001] The invention relates to a vacuum processing device, an operation method of the vacuum processing device and a storage medium. The vacuum processing device has a processing container for performing vacuum processing on a substrate, and is connected to the processing container through a lock chamber and has a The transfer room of the transfer mechanism. Background technique [0002] In the manufacturing process of a semiconductor device, gas processing using a processing gas such as dry etching or CVD (Chemical Vapor Deposition) is often performed on a semiconductor wafer (hereinafter referred to as a wafer) as a substrate to be processed. As a processing apparatus for performing such gas processing, a multi-chamber type processing apparatus having a transfer chamber (transfer chamber) and a plurality of processing modules is known from the viewpoint of processing a plurality of wafers with high throughput. The transfer chamber is provided with a wafer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/677
CPCH01L21/67748H01L21/67772H01L21/67196H01L21/67742H01L21/67393
Inventor 山口博史
Owner TOKYO ELECTRON LTD