Memory module and executing method of same

Abstract

The invention discloses a memory module and an executing method of the same. The memory module is used for the access of an external electric device. The memory module comprises an NAND flash memory,a dynamic random access memory unit and a memory controller, wherein the dynamic random access memory unit is electrically connected with the NAND flash memory and comprises a dynamic random access memory and an internal power supply; and the memory controller is used for controlling at least one of the NAND flash memory and the dynamic random access memory unit. When the electrical connection between the memory module and the external electric device is closed, the internal power supply of the dynamic random access memory unit actively provides the power supply for the dynamic random access memory so that data stored by the dynamic random access memory can be still retained.

Description

technical field [0001] The invention discloses a memory module, in particular to a dynamic random access memory with an internal power supply used as a data cache and temporary storage memory module of a NAND flash memory. Background technique [0002] Memory is divided into non-volatile memory (Non-Volatile Memory) and volatile memory (VolatileMemory). The difference between the two is that the data stored in the non-volatile memory will not disappear when the power goes out, while the volatile memory refers to a memory in which the data stored inside will disappear when the power is turned off. [0003] Random Access Memory (RAM) is a volatile memory with fast access speed, but the data stored in the memory will also disappear when the power goes off. Random access memory is divided into static random access memory (Static Random Access Memory, SRAM) and dynamic random access memory (Dynamic Random Access Memory, DRAM). Among them, static random access memory has a faste...

AI Technical Summary

Problems solved by technology

At present, the general file management system needs to access the flash memory through a Flash Translation Layer (FTL). The Flash translation layer is responsible for converting the logical address required by the general file management system and the physical address of the flash memory. The data page is used as the unit, and the erasing is based on the block. If the data page of the erased block contains useful data, the useful data must be removed before the block can be erased. Therefore, when writing When there is a lot of small-capacity data, it is easy to reduce the efficiency of the Flash translation layer to convert addresses

In addition, if the amount of data to be written is less than the capacity of one data page but still must be written in units of data pages, the size of the actually written data will be different from the size of the data written by the system, wasting memory space, that is, the so-called write Write Amplification; on the contrary, when erasing is performed, the useful data in the block must be removed, but the number of erasing blocks of the flash memory is limited, resulting in a reduction in the life of the flash memory

When an external electronic device 106 such as a computer or a mobile phone is electrically connected to the memory module 100, the external electronic device 106 provides a power supply 108 to the DRAM 102, and the external electronic device 106 passes through a data transmission interface 110 Access to the memory module 100, so when the memory module 100 is not electrically connected to the external electronic device 106, although the data in the NAND flash memory 104 still exists, due to the lack of power supply 108, the data in the dynamic random access memory 102 also disappeared

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