Photomask manufacturing method and photomask
A manufacturing method and photomask technology, which are applied in the photomask manufacturing and photomask fields, can solve the problems of time-consuming, low-efficiency correction, and detached foreign objects are easily attached to normal parts around defects, and achieve high-precision correction. , Efficient Correction, Efficient and Corrective Effects
Inactive Publication Date: 2010-03-31
HOYA CORP
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Problems solved by technology
[0005] However, for the usual black defect correction method in the past, although a small black defect area can be corrected, in the case of a large black defect area, it is very time-consuming and inefficient to correct using the conventional black defect correction method
In addition, for the usual black defect correction method in the past, the foreign matter that falls off is easy to adhere to the normal part (light-transmitting part) around the defect, and it needs to be corrected again
Method used
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[0030] Next, the best mode for carrying out the present invention will be described with reference to the drawings.
[0031] figure 1 It is a schematic plan view for demonstrating embodiment of the photomask manufacturing method of this invention in order of a process.
[0032] For the mask blank to be used, a light-shielding film 2 mainly composed of chromium is formed on a transparent substrate 1, and a resist is applied on the light-shielding film 2 to form a resist film. First, a predetermined pattern is drawn on the resist film. Generally, electron beams or light (short-wavelength light) are used for drawing, and electron beams are used in this embodiment. Therefore, in this embodiment mode, a positive photoresist is used as the resist. And, by drawing a predetermined device pattern on the above-mentioned resist film, and developing after drawing, a resist pattern 3 is formed (refer to figure 1 (a)). In addition, when drawing the above-mentioned device pattern, a spe...
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The invention relates to a photomask manufacturing method and a photomask. The photomask manufacturing method comprises processes of: preparing to form a photomask blank provided with a shielding filmon a transparent substrate; perform layout on a resist film formed on the shading film to form a resist pattern; taking the resist pattern as a mask for performing etching on the shading film to forma shading film pattern; and performing defect detection on the formed shading film pattern and correcting the defect part when black defect caused by surplus matter is present. The process of correcting the defect part forms a resist film again, which performs regulated pattern drawing and develops in a regulated area comprising the defect part, to form a resist pattern for correction, and takesthe resist pattern as a mask for etching, so as to removing the surplus matter of the defect part.
Description
technical field [0001] This invention relates to the manufacturing method of the photomask used for semiconductor device manufacture etc., and a photomask. Background technique [0002] When the photomask used in the manufacture of a semiconductor device is, for example, a binary mask, a light-shielding film is formed in a pattern on a transparent substrate. Such a photomask is manufactured through the steps of: preparing a photomask blank with a light-shielding film formed on a transparent substrate; and patterning a resist film formed on the light-shielding film. a step of resist patterning; and a step of etching the light-shielding film by using the resist pattern as a mask to form a light-shielding film pattern. [0003] However, with the above-mentioned photomask, it cannot be avoided that defects are generated on the light-shielding film pattern during its manufacturing process. In addition, a defect caused by an excess of the film pattern and adhesion of foreign mat...
Claims
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Patent Timeline
Login to View More IPC IPC(8): G03F1/00G03F1/14G03F1/72G03F1/74
CPCG03F1/26G03F1/32G03F1/34G03F1/54G03F1/62G03F1/72G03F1/76G03F1/80H01L21/0337
Inventor 佐野道明早瀬三千彦
Owner HOYA CORP