Cleanout fluid for removing photoresist layer residue

Abstract

The invention discloses a cleanout fluid for removing photoresist layer residue, which is characterized by containing N,N-diethylethanolamine, other hydramine solvents, water and chelating agent. The cleanout fluid has low corrosion rate to nonmetal and metal and can remove photoresist residues on wafers. Therefore, the novel cleanout fluid has favourable application prospect in the field of micro-electronics, such as metal cleaning, semiconductor chip cleaning and the like.

Description

technical field [0001] The invention relates to a cleaning solution in a semiconductor manufacturing process, in particular to a cleaning solution for removing photoresist layer residues. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step is to remove most of the photoresist layer (PR) by dry as...

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Problems solved by technology

After continuous improvement, the corrosion rate of the solution itself to metal aluminum has been greatly reduced. However, because this type of cleaning solution uses hydroxylamine, and hydroxylamine has the problems of single source, explosion and high price, it is necessary to reduce the cost of raw materials

Although the existing fluoride-based cleaning solutions have been greatly improved, such as US5,972,862, US 6,828,289, etc., there are still problems that cannot control the corrosion of metal and non-metallic substrates well at the same time, and it is easy to cause the characteristic size of the channel after cleaning. On the other hand, because the wet cleaning equipment in some mainstream semiconductor companies is made of quartz, and the fluorine-containing cleaning solution corrodes the quartz and the corrosion intensifies with the increase of temperature, so there is a difference with the existing quartz equipment. Incompatibility issues affect its widespread use

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