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Semiconductor temperature-difference power generation set

A technology of thermoelectric power generation and semiconductors, which is applied in the direction of generators/motors, electrical components, and thermoelectric devices that only use the Peltier or Seebeck effect. Small, long-lasting effect

Inactive Publication Date: 2010-05-12
HAIAN QIRUI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] At present, the structure of the existing semiconductor thermoelectric power generation system is relatively complicated, which is not suitable for large-scale application

Method used

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  • Semiconductor temperature-difference power generation set
  • Semiconductor temperature-difference power generation set
  • Semiconductor temperature-difference power generation set

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Embodiment Construction

[0019] The semiconductor thermoelectric power generation device of the present invention comprises an upper and lower two-layer insulating ceramic substrate 1, a heat dissipation copper sheet 2 fixed in the upper and lower substrate, a semiconductor array fixed inside the metal heat sink, and cathode and anode wires. Said semiconductor array is made up of P-type semiconductor 3 and N-type semiconductor 4.

[0020] When the semiconductor thermoelectric power generation device of the present invention is working, when external heat is added to the upper ceramic substrate, the joint ends of the two semiconductors absorb heat, and the end at a low temperature can obtain an electromotive force, thereby generating electric energy, and passing through the positive and negative electrodes Wire output, supply to battery or low-power electrical appliances. When the temperature difference between the two sides of the power generation system reaches 60 degrees, the voltage is 3.5 volts an...

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Abstract

The invention provides a semiconductor temperature-difference power generation set which comprises an upper insulation substrate, a lower insulation substrate, metal cooling fins fixed in the upper insulation substrate and the lower insulation substrate, semiconductor arrays fixed at the inner sides of the metal cooling fins and cathode and anode leads. The semiconductor temperature-difference power generation set has the following advantages that: 1. energy sources can be recovered and reused by directly converting waste heat into electrical energy; 2. The semiconductor temperature-difference power generation set generates no chemical reaction or mechanical movement, no noise or pollution, no abrasion, and long service life; and 3. the semiconductor temperature-difference power generation set has small size and light weight, and can be carried easily and can also be widely used in production of small appliances, instruments, toys and travel industry.

Description

technical field [0001] The invention relates to a power generation device, in particular to a device for generating power by utilizing semiconductor temperature difference, which belongs to the field of power generation. Background technique [0002] Semiconductor thermoelectric power generation can directly convert heat energy into electrical energy, and it can be applied even when there is only a small temperature difference. It is a green and environmentally friendly energy source with a wide range of applications. No pollution, no wear, light weight, long service life and other advantages, it is widely used in industrial waste heat, waste heat recovery and utilization, and aerospace auxiliary power systems. [0003] The semiconductor thermoelectric power generation module is made according to the Seebeck effect, that is, the joint end of the two semiconductors is placed at a high temperature, and the other end in a low temperature environment can obtain an electromotive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02N11/00H01L35/28H10N10/10
Inventor 吉敏红
Owner HAIAN QIRUI ELECTRONICS