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Method for manufacturing silicon sinter internal connection structure of silicon solar cell

A silicon solar cell and interconnection structure technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., to achieve the effects of small mechanical stress, elimination of shading, and high conversion efficiency

Inactive Publication Date: 2010-06-09
李涛勇
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the defects in the prior art, in order to solve the problem of the lead-out structure of the light-receiving surface electrode of the existing silicon solar cell, the purpose of the present invention is to provide a method for manufacturing a silicon sintered internal connection structure of a silicon solar cell. The silicon sintered internal connection structure is made in the substrate, and the output electrode of the light-receiving surface of the battery is drawn out from the non-light-receiving surface of the battery, which eliminates or reduces the shading of the light-receiving surface of the battery by the surface grid line, improves the passivation of the light-receiving surface of the battery, and facilitates the electrode of the battery. Connect, improve the photoelectric conversion efficiency and output power of the battery, improve the reliability of battery components, and make the product more beautiful

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  • Method for manufacturing silicon sinter internal connection structure of silicon solar cell
  • Method for manufacturing silicon sinter internal connection structure of silicon solar cell

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Embodiment Construction

[0012] The invention provides a method for manufacturing a silicon sintered internal connection structure of a silicon solar cell. The method can lead the output electrode of the light-receiving surface of the battery from the non-light-receiving surface of the battery through the silicon sintered internal connection structure, eliminating or reducing the contact between the surface grid lines and the battery. The shading of the light-receiving surface improves the passivation of the light-receiving surface of the battery, facilitates the electrode connection of the battery, improves the photoelectric conversion efficiency and output power of the battery, improves the reliability of the battery component, and makes the product more beautiful.

[0013] Preferred embodiment of the present invention is illustrated below in conjunction with accompanying drawing:

[0014] The accompanying drawing is a schematic structural view of a silicon solar cell with a silicon sintered intercon...

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Abstract

The invention relates to a method for manufacturing solar cells and discloses a method for manufacturing a silicon sinter internal connection structure of a silicon solar cell, which comprises the following steps: (1) a few pores and grooves which can pass through N-type or P-type silicon layers from one side of a silicon chip to reach P-type or N-type silicon layers are processed on the silicon chip; (2) silicon size is print-filled in the pores prepared in the step (1); (3) the silicon sinter internal connection structure is formed by sintering; and (4) electrodes are printed and sintered on a non-light-receiving surface of the cell to form negative and positive output of the cell. The method can realize the lead-out of all the electrodes of the cell from the back surface, is suitable for conventional solar cell material and technology, and has the advantages of high conversion efficiency, convenient electrode interconnection, high reliability and eye-pleasing appearance.

Description

technical field [0001] The invention relates to a method for manufacturing a silicon solar cell, in particular to a method for manufacturing a silicon sintered interconnection structure of a silicon solar cell. Background technique [0002] The structure of the existing crystalline silicon solar cell consists of an electrode grid line on the side receiving sunlight (i.e. the light-receiving surface), a passivation anti-reflection film, a silicon surface texture structure, a silicon substrate, and the side opposite to receiving sunlight (i.e. the non-reflection surface). Light-receiving surface) electrode metal layer. The silicon substrate undergoes a "doping" or "deposition" process to form an N-type layer and a P-type layer with two different conductivity types, and a PN junction is formed at the junction of the N-type layer and the P-type layer. The P-type layer and the N-type layer are respectively the output positive pole and the output negative pole of the battery. Wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李涛勇
Owner 李涛勇