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Inductively coupled plasma processing device and plasma processing method

A plasma and inductive coupling technology, which is applied in plasma, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve the problems of high device cost, difficult and high-precision plasma density distribution control, and large device scale. , to achieve good power efficiency

Active Publication Date: 2010-06-09
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in the technology described in Patent Document 1, it is necessary to design two high-frequency power supplies, a high-frequency power supply for the inner part of the helical antenna and a high-frequency power supply for the outer part, or to design a power distribution circuit, and the scale of the device becomes large, and the device high cost
In addition, in this case, the power loss is large, the power cost is high, and it is difficult to control the plasma density distribution with high precision.

Method used

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  • Inductively coupled plasma processing device and plasma processing method
  • Inductively coupled plasma processing device and plasma processing method
  • Inductively coupled plasma processing device and plasma processing method

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no. 1 approach

[0052] figure 1 It is a sectional view showing the inductively coupled plasma processing apparatus according to the first embodiment of the present invention. figure 2 It is a plan view showing a high-frequency antenna used in this inductively coupled plasma processing apparatus. This apparatus is used, for example, for etching a metal film, an ITO film, an oxide film, etc., and for ashing a resist film when forming a thin film transistor on a glass substrate for FPD. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

[0053] This plasma processing apparatus has a horn-shaped airtight main body container 1 made of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 is detachably assembled and is grounded through a ground wire 1a. The main body container 1 is divided up and down by a dielectric wall 2 into an antenna chamber 3 a...

no. 2 approach

[0137] The inductively coupled plasma processing apparatus according to the first embodiment is configured such that, among the outer antenna circuit 13a and the inner antenna circuit 13b connected in parallel, the impedance of one antenna circuit and the impedance of the other antenna circuit are in opposite phases. A circulating current is generated in the two antenna circuits connected in parallel. That is, the capacitive outer antenna circuit 13a is connected in parallel to the inductive inner antenna circuit 13b, and at least two antenna circuits are required. However, when there is only one antenna circuit, a circulating current can also be generated in the antenna circuit.

[0138] Figure 16 It is a circuit diagram showing an example of a feeding circuit for feeding a high-frequency antenna used in the inductively coupled plasma processing apparatus according to the second embodiment of the present invention.

[0139] like Figure 16 As shown, the inductively couple...

no. 3 approach

[0158] refer to Figure 21 In the above second embodiment, in the parallel resonance point and the vicinity of the parallel resonance point, the variable reactance element (X Tune ) The current (Tune current) flowing in 81 is approximately zero. Therefore, in the case of operating the inductively coupled plasma processing apparatus using the parallel resonance point and the vicinity of the parallel resonance point, as Figure 24 As shown in A, no variable reactance element for tuning (X Tune )81.

[0159] Here, the variable reactance element for tuning (XTune )81 Figure 24 In the circuit of A, when a part of the coil Lc and the terminal capacitor C are considered as loads, as Figure 24 As shown in B, the parallel variable capacitor 70 is used as the variable reactance element for tuning (X Tune ) The basic configuration diagram of the case of the T-type matching circuit of 81 is the same.

[0160] The T-type matching circuit consists of a matching variable reactance el...

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Abstract

The invention provides an inductively coupled plasma processing device with better power efficiency, comprising a processing chamber housed the substrate to be processed and performing the plasma process; a loading platform for loading the substrate to be processed in the processing chamber; a processing air supply system for supplying the air to be processed in the processing chamber; an exhaust system for exhausting processing chamber; a wireless circuit (13b) arranged outside the processing chamber by a dielectric unit to supply high-frequency power force, thus an inductive field is formed in the processing chamber; and a parallel circuit (wireless circuit (13a)) connected with the wireless circuit (13b) in parallel to make the impedance of the wireless circuit (13a) in opposite phase relative to the impedance of the wireless circuit (13b) and inductively coupled plasma is generated in the processing chamber.

Description

technical field [0001] The present invention relates to an inductively coupled plasma processing apparatus for performing plasma processing on substrates such as glass substrates used in the manufacture of flat panel displays (FPD) such as liquid crystal display devices (LCD), a plasma processing method, and an inductively coupled plasma processing method stored therein. A computer-readable storage medium for programs implemented in the plasma processing apparatus. Background technique [0002] Various plasma processing apparatuses, such as a plasma etching apparatus and a plasma CVD film forming apparatus, are used to perform predetermined processing on a glass substrate in a manufacturing process of a liquid crystal display device (LCD). As these plasma processing apparatuses, capacitively coupled plasma processing apparatuses are often used at present, but recently, inductively coupled plasma (Inductively Coupled Plasma: IPC) processing has the great advantage of being ab...

Claims

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Application Information

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IPC IPC(8): H05H1/46C23C16/505C23F4/02H01L21/3065
CPCH01J37/32183
Inventor 佐佐木和男齐藤均佐藤亮
Owner TOKYO ELECTRON LTD