Hybrid microwave integrated circuit

A technology of integrated circuits and mixed microwaves, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as easy oscillation, poor thermal conductivity, and weak welding, so as to increase thermal conductivity, improve matching performance and Anti-jamming ability and effect of ensuring stability

Inactive Publication Date: 2010-06-16
SICHUAN LONGRUI MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a large-scale high-frequency power device suitable for manufacturing large-scale high-frequency Hybrid Microwave Integrated Circuits for High Power Devices

Method used

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Examples

Experimental program
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Embodiment

[0023] The power device in this example uses an AlGaN / GaN HEMT (gallium nitride-based high electron mobility field effect transistor) power device based on a SiC (silicon carbide) substrate. Chip connection structure such as figure 2 , the circuit schematic see image 3 .

[0024] figure 2 A schematic diagram showing the connection line configuration relationship of 2 of the 8 power devices packaged on the 16mm substrate. In this example, the eight power devices in the hybrid microwave integrated circuit are composed of chip structures such as figure 1 The single power device (two field effect transistors) shown is synthesized. The gate electrodes and drain electrodes of each field effect transistor are respectively connected in parallel by welding gold wires with a diameter of about 25 μm, and the parallel connected gate electrodes and drain electrodes are respectively welded on the matching circuit by gold wires, such as figure 2 shown. In this example, each power d...

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Abstract

The invention relates to a hybrid microwave integrated circuit. Aiming at the defects that the hybrid microwave integrated circuit of a large-size high-frequency power device has infirm welding and poor heat conducting performance and is easy to produce oscillation in the prior art, the invention discloses the hybrid microwave integrated circuit suitable for manufacturing the large-size high-frequency power device. In order to solve the technical problems, the invention adopts the technical scheme that the hybrid microwave integrated circuit comprises a substrate encapsulated in a tube shell, and at least two power devices manufactured on the substrate; the power device consists of field effect transistors; a matching circuit and an extraction electrode are manufactured on the substrate; the power device is connected with the extraction electrode through the matching circuit; the extraction electrode is connected with a pin; and gate electrodes of chips of the field effect transistors are welded in parallel through metal wires, drain electrodes of the chips of the field effect transistors are welded in parallel through metal wires, and the gate electrodes and the drain electrodes connected in parallel are welded on the matching circuit through the metal wires respectively.

Description

technical field [0001] The invention relates to microwave integrated circuits, in particular to a hybrid microwave integrated circuit with large-scale high-frequency power devices as active components. Background technique [0002] In the development of high-frequency and high-power devices, it is necessary to combine multiple small-sized high-frequency power devices, generally field-effect transistors (also called field-effect transistor chips), to increase the output power of the power devices and to The large-size high-frequency power device is designed with an internal matching circuit to match its input and output ports (lead-out electrodes) to the rated impedance (such as 75Ω, 50Ω, etc.). Then, the hybrid microwave integrated circuit (Hybrid Microwave Integrated Circuits) packaging technology is used to package multiple power devices, internal matching circuits and chip capacitors (which can be regarded as part of the matching circuit) into the package. The quality of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L23/52H01L23/49
CPCH01L2224/48091H01L24/49H01L2224/45144H01L2924/13064H01L2924/30107H01L2924/3011H01L2224/49H01L2924/13055H01L2224/45015H01L2924/1306H01L2924/14H01L2924/00014H01L2924/00H01L2924/00012
Inventor 罗卫军陈晓娟李滨刘新宇杨成樾
Owner SICHUAN LONGRUI MICROELECTRONICS
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