Method for preparing insulating film attached to touch screen
A technology of insulating film and touch screen, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of unstable metal oxide film, unusable touch screen, failure of insulating film, etc., and achieve unique metal color and luster , Not easy to change color, good bonding effect
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AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0016] 1) Screen the PC / PMMA substrate, wash with deionized water to remove debris around the substrate, and then dry it with hot air;
[0017] 2) Put the substrate into the substrate frame of the equipment, tear off the protective film on the surface, and perform electrostatic dust removal;
[0018] 3) Send the substrate rack into the vacuum chamber for vacuuming, first perform pre-vacuumization, and the vacuum degree is 5×10 -2 Torr;
[0019] 4) Enter the No. 2 vacuum chamber, and vacuum up to 3×10 -3 Torr, while heating the substrate to 80°C;
[0020] 5) Send the substrate frame into the sputtering coating chamber, and perform pulse reactive sputtering to deposit NiO film, the vacuum degree is 5×10 -3 Torr, the pulse frequency of the power supply is 400HZ;
[0021] DC power supply
(KW)
Pulse electricity
source
(V)
Vacuum
(Torr)
Ar / H 2
(sccm)
o 2 (sccm)
...
Embodiment 2
[0026] Step 1) and step 2) are the same as in Example 1;
[0027] 3) Send the substrate rack into the vacuum chamber, and perform pre-vacuumization first, with a vacuum degree of 4×10 -2 Torr;
[0028] 4) Enter the No. 2 vacuum chamber and evacuate to 2×10 -3 Torr, while heating the substrate to 70°C;
[0029] 5) Send the substrate frame into the sputtering coating chamber for pulse reactive sputtering to deposit NiO film; the vacuum degree reaches 4×10 -3 Torr, the pulse frequency of the power supply is set to 400HZ;
[0030] DC power supply
(KW)
(V)
Vacuum
(Torr)
Ar / H 2
(sccm)
o 2
(sccm)
4.5
yes
480
4×10 -3
20 / 0
2
[0031] 6) Send the substrate rack into the transition chamber with a vacuum of 3×10 -3 Torr;
[0032] 7) Send the substrate rack into the unloading chamber with a vacuum of 4×10 -2 Torr, cool the substrate to 20 °C.
[0033...
Embodiment 3
[0035] Step 1) and step 2) are the same as in Example 1;
[0036] 3) Send the substrate rack into the vacuum chamber, and perform pre-vacuumization first, with a vacuum degree of 4×10 -2 Torr;
[0037] 4) Enter the No. 2 vacuum chamber and evacuate to 3×10 -3 Torr, while heating the substrate to 75°C;
[0038] 5) Send the substrate frame into the sputtering coating chamber for pulse reactive sputtering to deposit NiO film; the vacuum degree reaches 3×10 -3 Torr, the pulse frequency of the power supply is set to 400HZ;
[0039] DC power supply (KW)
Vacuum
(Torr)
Ar / H 2
(sccm)
o 2
(sccm)
4
yes
450
4.5×10 -3
50 / 0
5
[0040] 6) Send the substrate rack into the transition chamber with a vacuum of 2×10 -3 Torr;
[0041] 7) Send the substrate rack into the unloading chamber with a vacuum of 5×10 -2 Torr, cool the substrate to 20 °C.
[0042] On...
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