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Device for growing ZnS at low temperature by chemical vapor deposition and technique thereof

A chemical vapor deposition and chemical vapor technology, which is used in the field of inorganic bulk material preparation, can solve the problems of reducing the infrared transmission performance of ZnS, and achieve the effect of solving arching and cracking.

Active Publication Date: 2012-02-29
GRINM GUOJINGHUI NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the infrared transmission performance of ZnS grown at high temperature is reduced

Method used

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  • Device for growing ZnS at low temperature by chemical vapor deposition and technique thereof
  • Device for growing ZnS at low temperature by chemical vapor deposition and technique thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) Choose high-strength graphite material as the substrate, polish the substrate, and then use the method of spraying to cover a layer of carbon colloid on the substrate, and finally protect the substrate with argon and dry it at a temperature of 200°C;

[0028] 2) Adjust the spatial position of the deposition chamber to maintain symmetry with respect to the air inlet and outlet. At the same time, uniform spatial isolation must be ensured between the deposition substrates in different orientations. A sealing screen is installed in the peripheral space of the deposition chamber to effectively isolate it from the heating system, and Connect the other parts of the device ( figure 1 );

[0029] 3) Pre-evacuate, adjust the deposition chamber pressure to 1.5E4Pa;

[0030] 4) Adjust the temperature of the zinc pool to 600°C, the temperature of the deposition chamber to 630°C, and at the same time feed the raw material gas H into the deposition chamber 2 S and Zn vapor, the r...

Embodiment 2

[0034] 1) Choose high-strength graphite material as the substrate, polish the substrate, and then use the method of spraying to cover a layer of carbon colloid on the substrate, and finally protect the substrate with argon and dry it at a temperature of 200°C;

[0035] 2) Adjust the spatial position of the deposition chamber to maintain symmetry with respect to the air inlet and outlet. At the same time, uniform spatial isolation must be ensured between the deposition substrates in different orientations. A sealing screen is installed in the peripheral space of the deposition chamber to effectively isolate it from the heating system, and Connect the other parts of the device ( figure 1 );

[0036] 3) Pre-evacuate and adjust the deposition chamber pressure to 3E4Pa;

[0037] 4) Adjust the temperature of the zinc pool to 500°C, the temperature of the deposition chamber to 650°C, and at the same time feed the raw material gas H into the deposition chamber 2 S and Zn vapor, the ...

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Abstract

The invention discloses a device for growing ZnS at low temperature by chemical vapor deposition and a technique thereof, belonging to the preparation field of inorganic bulk material. The technique mainly comprises the content as follows: deposition chamber hardware structure with non-closed boundary attribute is adopted; simultaneously, surface treatment is carried out on a deposition chamber; and in situ variable temperature heat treatment is carried out on deposited product, so that the problems of arch camber and cracking of low temperature CVDZnS material can be effectively solved, and large-size material which has more excellent infrared optical performance than that of high temperature CVDZnS material can be obtained.

Description

technical field [0001] The invention relates to equipment and technology for preparing large-sized zinc sulfide (ZnS) with high optical transmission performance by using a chemical vapor deposition process (CVD) under low-temperature growth conditions, and belongs to the field of inorganic block material preparation. Background technique [0002] ZnS is an infrared optical transmission material with excellent performance. Its transmission band covers visible light, mid-infrared and far-infrared. It also has excellent mechanical and thermal properties. It is used in infrared detection and imaging devices in special environments or advanced weapons. The material of choice for windows, fairings and lenses. [0003] At present, the ways to prepare ZnS in the world include powder hot pressing process, molten single crystal drawing process and chemical vapor deposition (CVD) process. The ZnS material prepared by CVD process has good purity, high density, and excellent optical tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/08
Inventor 王铁艳苏小平张福昌杨海魏乃光杨建纯赵永田霍承松付利刚石红春
Owner GRINM GUOJINGHUI NEW MATERIALS CO LTD