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Method for growing terbium-aluminum garnet crystal by using guide die pulling method

A technology of garnet and pulling method, which is applied in the direction of self-melt pulling method, single crystal growth, crystal growth, etc., can solve the problems of high cost, slow crystal growth rate, long cycle, etc., and achieve fast crystal growth speed, Fast crystal growth rate, effect of large size

Active Publication Date: 2013-09-04
FUZHOU UNIV
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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for growing terbium aluminum garnet crystals by edge-defined film-fed growth method, to solve the problem of crystal growth rate in the presence of large-sized bulk single crystals of terbium aluminum garnet prepared by high-temperature solution method Problems of slowness, long cycle and high cost

Method used

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  • Method for growing terbium-aluminum garnet crystal by using guide die pulling method
  • Method for growing terbium-aluminum garnet crystal by using guide die pulling method
  • Method for growing terbium-aluminum garnet crystal by using guide die pulling method

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Embodiment Construction

[0013] The present invention can be specifically implemented as follows:

[0014] Put the guide mold 3 with the longitudinal slit 7 inside into the crucible 4, then add the polycrystalline raw material into the crucible 4, heat the crucible 4 to melt the polycrystalline raw material, and make the molten body 5 of the polycrystalline raw material not pass through the guide mold The gap 7 in the lower part of the mold, so that the molten body 5 of the polycrystalline raw material rises to the upper surface of the guided mold 3 along the longitudinal slit 7 in the guided mold under the action of the capillary effect, and then on the upper surface of the guided mold 3 The seed crystal 1 is placed and pulled into a single crystal 2 consistent with the shape of the guided mold.

[0015] The polycrystalline raw material is composed of Tb 3 Al 5 o 12 , Tb 2 o 3 , Tb 4 o 7 , TbAlO 3 , Tb 4 Al 2 o 9 One or several compounds in Al 2 o 3 Composition, the ratio Tb / (Tb+Al)...

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Abstract

The invention relates to a method for growing a terbium-aluminum garnet crystal by using a guide die pulling method, comprising the following steps of: placing a guide die internally provided with a longitudinal gap into a crucible; adding a polycrystal raw material into the crucible; heating the crucible to melt the polycrystal raw material; immersing a molten mass of the polycrystal raw material into a gap at the lower part of the guide die so as to raise the molten mass of the polycrystal raw material to an upper surface of the guide die under the action of capillary effect along the longitudinal gap of the guide die; and then pulling a lower seed crystal into a single crystal consistent with the shape of the guide die. By the invention, a large-size terbium-aluminum garnet single crystal can be prepared, post processing procedures can be simultaneously simplified and the cost for preparing the crystal can be reduced; in addition, the growth speed of the crystal is high, the optical homogeneity of the prepared crystal is favorable and the problem that a large-size body single crystal is not difficult to prepare by adopting a pulling method can be solved.

Description

technical field [0001] The invention relates to a method for growing crystals, in particular to a method for growing terbium aluminum garnet crystals by a guided mode pulling method. Background technique [0002] Terbium aluminum garnet (Tb 3 Al 5 o 12 , TAG) crystal is a transparent paramagnetic magneto-optical material, which has a large Verdet constant in the visible and near-infrared bands, and absorbs less in this band. It is a Faraday isolator and laser magneto-optical device in fiber lasers. ideal material. However, terbium aluminum garnet crystals are non-isotropic molten compounds, and it is difficult to grow large-size bulk single crystals by the Czochralski method, while bulk single crystals can theoretically be obtained by the high-temperature solution method, but the crystal growth rate is slow and the period Long and costly. At present, it is reported that Japanese scholars use the laser floating zone (FZ) method to grow terbium aluminum garnet single crys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/24C30B29/28
Inventor 庄乃锋陈建中宋财根汪荣峰赵斌郭飞云胡晓琳
Owner FUZHOU UNIV
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