Method for manufacturing flash memory

Abstract

The invention provides a method for manufacturing a flash memory, which comprises the following steps: providing a substrate; etching a shallow groove; carrying out ion implantation to form a source region; forming a first conductor layer to form a source; forming a second oxide layer and a storage medium layer, wherein the storage medium layer is made of nano silicon; forming a third oxide layer and a second conductor layer on the storage medium layer and the substrate, and etching the second conductor layer to form a first floating gate, a second floating gate and a control gate; forming a fourth oxide layer and a third conductor layer on the second conductor layer and the substrate, and etching the third conductor layer to form a first optional gate and a second optional gate; carrying out ion implantation to form a first drain region and a second drain region; and forming a first drain and a second drain on the first drain region and the second drain region. The flash memory manufactured by the method has the advantage of ingenious structural design and can effectively reduce the size of the flash memory, thereby enhancing the service efficiency of the substrate per unit area.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, and in particular to a flash memory manufacturing method. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electrically erasable and program...

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the problems encountered in the prior art to increase storage density by reducing device size, the present invention provides a method for producing flash memory with small volume and large storage capacity

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