Photosensitive resin composition and application thereof

A technology of photosensitive resin and composition, applied in the field of photosensitive resin composition, can solve the problems of circuit pattern distortion, polyimide ring opening, film shrinkage, etc., and achieve the effect of saving energy

Active Publication Date: 2010-08-18
ETERNAL MATERIALS CO LTD
View PDF6 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because acrylate monomers with tertiary amino groups are prone to produce alkaline substances when exposed to water vapor, the alkaline substances will cause polyimide ring opening, destroying the structural stability of polyimide, and in the subsequent curing step Sometimes there will also be a problem of film shrinkage, which will distort the circuit pattern after development. Therefore, this kind of polyimide is only suitable for making cover films with a film thickness of less than 10 microns. If you need to make a thicker polyimide layer or cover film, this method has its limitations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photosensitive resin composition and application thereof
  • Photosensitive resin composition and application thereof
  • Photosensitive resin composition and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0200] Weigh 88.85 g (0.2 mol) of 6FDA, 28.63 g (0.1 mol) of BAPA and 23.03 g (0.1 mol) of MEMG, add 300 ml of NMP, stir at room temperature for 1 hour, then raise the temperature to 50°C and stir for 4 hours. Afterwards, 50 ml of xylene was added, and water was removed with a Dean-Stark apparatus at 150°C. After the water is completely removed, polyimide P1 with hydroxyl groups is obtained.

Embodiment 2

[0202] Weigh 100.074 g (0.2 mol) of DA1 and 42.46 g (0.2 mol) of DMDB, add 450 ml of NMP, stir at room temperature for 1 hour, then raise the temperature to 50°C and stir for 4 hours. Afterwards, 50 ml of toluene was added, and water was removed with a Dean-Stark apparatus at 130°C. After the water is completely removed, polyimide P2 with hydroxyl groups is obtained.

[0203] (B) Synthesis of polyimide modified by diisocyanate

Embodiment 3

[0205] Weighed 490 g of the polyimide P1 prepared in Example 1, added 0.85 g of 1-MI, 6.51 g of HEMA, 11.12 g of IPDI and 0.11 g of PTZ, and stirred at room temperature for 1 hour. Thereafter, the temperature was raised to 60° C., and the mixture was stirred for 6 hours to obtain photosensitive polyimide P3 whose hydroxyl group was modified with diisocyanate.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a photosensitive resin composition which comprises photosensitive polyimide with the formula (I), acrylic ester monomers and a photoinitiator, wherein in the formula, A, B, D, J, m and n are defined as the text.

Description

technical field [0001] The present invention relates to a photosensitive resin composition having both insulation and photoresist properties; specifically, the present invention particularly relates to a composition containing polyimide, which can be used as an insulating material for electronic equipment, or for making a passivation film in a semiconductor device, Photosensitive resin composition for surface protection film, buffer coating layer, and interlayer insulating film. Background technique [0002] In recent years, due to the emphasis on lightness, thinness, shortness and smallness of electronic products, the size of various electronic components must also be made smaller and smaller. Under this development trend, flexible printed circuit boards with the characteristics of lightness, thinness and high temperature resistance and which can be mass-produced have more room for development. At present, popular electronic products such as mobile phones, liquid crystal di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/027H05K3/06
Inventor 周孟彦李传宗郑弼仁胡瑞楷
Owner ETERNAL MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products