Fabricating method for vertical field effect transistor
A technology of vertical field effect and fabrication method, applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device, etc., can solve the problems of destroying the value of organic electronic engineering, high cost, and achieve excellent reproducibility, low manufacturing cost, The effect of excellent performance
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[0025] The present invention will now be described more fully with reference to the associated drawings, in which exemplary embodiments of the invention are disclosed.
[0026] As shown in FIG. 1 , a conventional organic field effect transistor may include adjacent source electrodes 2 and drain electrodes 6 on a substrate 1 . Gate electrode 5 and charge blocking layer 4 on source electrode 2 and drain electrode 6 . The current flow between the source electrode 2 and the drain electrode 6 can be controlled by the voltage applied to the gate electrode 5 . The length of the channel 3 formed of organic semiconducting material may be defined by the gap between the source electrode 2 and the drain electrode 6 . In order to obtain a large current, the length of the channel 3 is reduced to less than about 5 μm by a high-resolution method such as photolithography.
[0027] As shown in FIG. 2 , a conventional vertical organic field effect transistor may include a source electrode 2 an...
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