Vertical launching quantum cascade laser structure

A quantum cascade and vertical emission technology, applied to lasers, laser components, semiconductor lasers, etc., can solve problems such as difficult material growth and complex etching processes

Inactive Publication Date: 2010-09-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] Although many achievements have been made in the in-depth research on vertical emission quantum cascade lasers with distributed feedback of two-stage gratings, including room temperature pulse lasing and far-field divergence angle of 0.4 degrees, most of these researches are based on traditional dielectric waveguides. structure
Although the dielectric waveguide secondary grating distributed feedback vertical emission quantum cascade laser has low optical loss, its very thick waveguide layer makes the material growth very difficult, and its grating requires deep etching, which in turn makes the etching process difficult. Very complicated

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Embodiment Construction

[0020] Please refer to the figure, the present invention provides a vertical emission quantum cascade laser structure, including:

[0021] A substrate 10, on which a waveguide layer 11, an active layer 12 and a contact layer 13 are grown sequentially; the substrate 10 is an InP substrate; the material of the waveguide layer 11 is InGaAs, the The waveguide layer 11 is n-type doped with a doping concentration of 6×10 16 cm -3 , with a layer thickness of 0.55 μm; the active layer 12 is composed of 40 cycles of InGaAs / InAlAs, and the wavelength corresponding to the active layer is 8-12 μm; the material of the contact layer 13 is InGaAs, and the doping concentration is 1×10 19 cm -3 , the layer thickness is 0.05 μm;

[0022] Metal grating layer 14, the metal grating layer 14 is located above the contact layer 13, and the metal grating layer 14 has a second-order Bragg period; the material of the metal grating layer 14 is silver, and the thickness of the metal grating layer 14 i...

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Abstract

The invention provides a vertical launching quantum cascade laser structure comprising a substrate and a metal grating layer, wherein a waveguide layer, an active layer and a contact layer sequentially grow on the substrate; and the metal grating layer is positioned on the contact layer and has a secondary Bragg period.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a vertical emission quantum cascade laser structure. The unique feature of this structure is that the introduction of the surface plasmon waveguide into the vertical emission quantum cascade laser with two-stage grating distribution feedback can achieve high vertical coupling efficiency while simplifying the material growth and grating preparation process. Background technique [0002] Quantum cascade lasers with a wavelength of 8-12 μm have very broad application prospects in the fields of atmospheric environment monitoring and infrared countermeasures. Unlike conventional Fabry-Perot cavity quantum cascade lasers, which have multi-mode operation and edge emission, vertical emission quantum cascade lasers have the advantages of single-mode operation and vertical emission at the same time, and can achieve dual-mode in practical applications. Dimensio...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/343
Inventor 郭万红刘俊岐陆全勇张伟江宇超李路王利军刘峰奇王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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