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Group III nitride compound semiconductor light emitting element and manufacturing method thereof

A technology of light-emitting elements and nitrides, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as increased workload and high manufacturing costs

Inactive Publication Date: 2010-10-06
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with conventional manufacturing methods of light-emitting elements, this technology requires increased labor and high manufacturing costs because it requires mask formation and etching in separate machines during epitaxial growth

Method used

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  • Group III nitride compound semiconductor light emitting element and manufacturing method thereof
  • Group III nitride compound semiconductor light emitting element and manufacturing method thereof
  • Group III nitride compound semiconductor light emitting element and manufacturing method thereof

Examples

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Embodiment Construction

[0062] In the exemplary embodiment of the present invention, any conventional technique may be used to manufacture the Group III nitride compound semiconductor element.

[0063] By adjusting the thickness of the buffer layer to be, for example, equal to or greater than and equal to or less than The number of crystal defects as facet origins can be controlled.

[0064] For example, in the case where the GaN layer forms facets as the second layer, by adjusting the thickness of the GaN layer to be equal to or greater than 500 nm and equal to or less than 6 μm, the size of each facet can be controlled.

[0065] For a single light emitting layer that emits light, or a well layer of a single quantum well structure or a multiple quantum well structure, it is preferable to set the indium composition to be equal to or greater than 0.05 and equal to or less than 0.5. In particular, it is preferable to set the indium composition to be equal to or greater than 0.3 and equal to or less...

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Abstract

A group III nitride compound semiconductor light emitting element comprising: a first layer which is a single crystal layer of a group III nitride compound semiconductor, the first layer formed on the buffer layer and including a threading dislocation; a second layer of a group III nitride compound semiconductor formed on the first layer, the second layer including a pit and a flat portion, wherein the pit continuing from the threading dislocations and having a cross section parallel to the substrate expanding in a growth direction of the second layer; a luminescent layer including a flat portion and a pit corresponding to those of the second layer. The indium concentration in the pit of the luminescent layer is smaller than that in the flat portion of the luminescent layer. A luminescent spectrum width of thereof is expanded as compared to a case where the pit does not exist.

Description

[0001] related application [0002] This application claims priority from Japanese Patent Application No. 2009-081148 filed March 30, 2009, the contents of which are incorporated herein by reference. technical field [0003] The invention relates to a Group III nitride compound semiconductor light-emitting element and a manufacturing method thereof. In this application, the group III nitride compound semiconductor is represented by the chemical formula Al x Ga y In 1-x-y A semiconductor represented by N(0≤x, y, x+y≤1), the semiconductor p-doped or n-doped by any impurity, and a part of Group III elements or Group V elements in which B or Ti and P, The semiconductor replaced by As, Sb and Bi. Background technique [0004] As light-emitting devices using group III nitride compound semiconductor elements become popular, application of such devices to general lighting is being developed. For example, Group III nitride compound semiconductor light emitting elements have been...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/32
CPCH01L33/32H01L33/08H01L33/24
Inventor 斋藤义树牛田泰久
Owner TOYODA GOSEI CO LTD
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