Laser device for realizing semiconductor laser beam coupling of parallel plate prism combination

Abstract

The invention provides a laser device for realizing semiconductor laser beam coupling of a parallel plate prism combination, which consists of two semiconductor laser alternating arrays, two fast axis collimation lenses, two slow axis collimation lenses, a parallel plate glass prism stack, a beam expanding system consisting of two lens pillars and a focusing system consisting of balsaming lenses, wherein all the parts are arranged in parallel; and the invention realizes the high power of kilowatt laser, and overcomes the defects of large volume, low energy efficiency, short service life and the like of a chemical laser, a CO2 laser, a lamp pump and a semiconductor laser pumping the Nd:YAG fundamental frequency of which is 1064nm. The power of the high-power semiconductor laser light source related by the invention can be output in hectowatt to kilowatt and finally can be coupled with an optical fiber. Under the condition of the same power, the volume of the laser device is 1/3-1/10 of that of other lasers, the operation cost is 1/4-1/20 of that of the other lasers, and the service life can be over 10000 hours which is 5-10 times of that of the other lasers.

Description

technical field [0001] The invention relates to a laser device for realizing semiconductor laser coupling by parallel plate prism groups. Background technique [0002] Compared with other types of lasers, semiconductor lasers (LD) have the advantages of small size, light weight, high efficiency, long life, and direct current modulation, so they are widely used in many fields such as industry, military, nuclear energy, and communications. The requirements for output power and brightness of semiconductor lasers are also getting higher and higher. By integrating the semiconductor laser light-emitting unit into a one-dimensional linear array (ie Bar) and stacking multiple bars into a stack, the output power of the semiconductor laser can be effectively improved, but due to the limitation of heat dissipation, the semiconductor laser stack Unlimited stacking of LD Bars is not allowed. Internationally, 25 Bars can be stacked, and the continuous output power is 2500w. Such power s...

AI Technical Summary

Problems solved by technology

This structure can achieve beam combining, but the disadvantages are: (1) The two lasers are placed vertically at 90°, and the adjustment is complicated; (2) The cube polarization coupling prism is used, and the middle glued surface melts the glue during long-term high-power use, which

Images