Storage device and information re-recording method
A technology for storage devices and storage elements, which is applied in the field of storage devices and re-recording information, can solve the problems of large write current and difficulty in miniaturization, and achieve the effects of reducing the number of cycles, reducing time, and improving adjustment capabilities
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[0036] figure 1 Shows a storage unit L of the storage device according to the first embodiment of the present invention. The storage unit 1 includes: a memory element, for example, figure 2 The variable resistance element 10 shown in ; and the N-channel MOS type transistor 20 as a switching element. In this memory device, a plurality of memory cells 1 are arranged in an array state or a matrix state by regarding the memory cells 1 as memory units. image 3 An equivalent circuit at the time of a write operation of the memory cell 1 is shown.
[0037] For example, variable resistance element 10 is formed by stacking electrode 11 , ion source layer 12 , high resistance layer (variable resistance layer) 13 , and electrode 14 .
[0038] The electrodes 11 and 14 are composed of metal materials such as Al, Cu, and W, for example. The high-resistance layer 13 is formed of, for example, a metal material, a rare earth element, an oxide or nitride of a mixture of a metal material an...
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