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Method for optical proximity correction of database

A technology of optical proximity correction and database, which is applied in optics, originals for opto-mechanical processing, photoengraving of patterned surfaces, etc. It can solve the problems of long rotation time and low efficiency, and achieve the effect of improving efficiency.

Inactive Publication Date: 2010-11-24
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In view of this, the technical problem solved by the present invention is: when the existing OPC corrects the database, the efficiency is relatively low, and the turnaround time is relatively long

Method used

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  • Method for optical proximity correction of database
  • Method for optical proximity correction of database
  • Method for optical proximity correction of database

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art undoubtedly fall within the protection scope of the present invention.

[0039] The present invention is described in detail by means of schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of illustration, the schematic diagrams will not be partially enlarged according to the general scale, which should not be used as a limitation of the present invention.

[0040] The present invention only re-corrects the graphics that do not meet the requirements after the first correction, and then merges the corrected results with the original database after the...

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Abstract

The invention discloses a method for the optical proximity correction of a database, which comprises the following steps of: after the correction for the first time, re-correcting the partial database of graphs which do not conform to requirements; merging the re-corrected partial database of the graphs which do not conform to the requirements with the database corrected at the first time; and outputting the final database. The efficiency of correcting the database can be greatly improved by adopting the method.

Description

technical field [0001] The invention relates to the field of semiconductor photolithography technology, in particular to a method for performing optical proximity correction on a database. Background technique [0002] In the manufacture of integrated circuits, in order to smoothly transfer the pattern of the integrated circuit to the wafer substrate, the circuit pattern must first be designed as a mask pattern, and then the mask pattern is transferred from the surface of the mask to the wafer substrate. . The wafer substrate includes, but is not limited to, materials such as silicon, silicon germanium (SiGe), silicon-on-insulator (SOI), and various combinations thereof. With the development of Very Large Scale Integrated circuits (VLSI), there has been an increasing demand for reducing pattern size and increasing layout density. When the critical dimensions (CD) are close to or smaller than the wavelength of the light source used in the lithography process, the exposure p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/36
Inventor 张飞王伟斌
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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