integrated circuit structure

An integrated circuit and fin structure technology, applied in the field of integrated circuit structure, can solve the problems of low energy state density of conduction band, high source/drain resistance, etc.

Active Publication Date: 2016-06-22
TAIWAN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In addition, the low energy density of states in the conduction band leads to high source / drain resistance, which avoids the improvement of the final transistor drive current

Method used

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Embodiment Construction

[0043] In the following, each embodiment is described in detail and examples accompanied by drawings are used as a reference basis of the present invention. In the drawings or descriptions in the specification, the same figure numbers are used for similar or identical parts. And in the drawings, the shape or thickness of the embodiments may be enlarged, and marked for simplicity or convenience. Furthermore, the parts of the components in the drawings will be described separately. It should be noted that the components not shown or described in the drawings are forms known to those skilled in the art. In addition, specific The examples are only for revealing specific methods used in the present invention, and are not intended to limit the present invention.

[0044] Embodiments of the present invention provide novel transistors including compound semiconductor materials composed of Group III and Group V elements (commonly referred to as III-V compound semiconductors), and a ma...

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Abstract

The present invention provides integrated circuit structures. The above-mentioned integrated circuit structure includes a base and a channel on the base. The channel includes a first group III-V compound semiconductor material composed of group III elements and group V elements. A gate structure is disposed on the channel. A source / drain region adjoins the channel, and the source / drain region includes a Group IV region selected from a group consisting essentially of silicon, germanium, and combinations thereof. By regrowing Si / Ge source / drain regions, existing silicidation techniques can be used to reduce source / drain resistance and improve final transistor drive current. The buffer layer has the effect of moderating the lattice constant transition between the channel and source / drain regions of the transistor, thus resulting in a reduced defect density and reduced junction leakage.

Description

technical field [0001] The present invention relates to integrated circuit structures, and more particularly to transistors comprising III-V compound semiconductors and methods of manufacturing the same. Background technique [0002] There is a close correlation between the speed of a metal-oxide-semiconductor (MOS) transistor and the driving current of the MOS transistor, and the driving current of the MOS transistor is closely related to the mobility of charges. For example, when the electron mobility is high in the channel region, the NMOS transistor has a high driving current, whereas when the hole mobility is high in the channel region, the PMOS transistor has a high driving current. [0003] Compound semiconductor materials composed of Group III and Group V elements (commonly known as III-V compound semiconductors) are good candidates for forming NMOS transistors because of their high electron mobility. Therefore, III-V compound semiconductors are often used to form N...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L29/78H01L29/06H01L21/336
Inventor 柯志欣万幸仁
Owner TAIWAN SEMICON MFG CO LTD
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