Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ceramic substrate and manufacturing method thereof

A ceramic substrate and ceramic technology, applied in the field of ceramic substrates, can solve the problems of warping or arching of film layers or components, component failure, rough surface, etc., and achieve the effect of reducing surface roughness and alleviating residual stress.

Active Publication Date: 2012-11-21
IND TECH RES INST
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, optical components that include ceramic substrates, if the ceramic substrate has a high thermal expansion coefficient, the difference in thermal expansion coefficient between the ceramic substrate and other optical materials (glass or quartz) can cause stress (causing deformation or distortion) , leading to changes in the optical properties originally set; in addition, when using a ceramic substrate as a light-emitting diode (LED) or a solar cell (solar cell) for example, the excessive difference in thermal expansion coefficient will cause the film deposited on it later Layers or components produce warping or arching, and their rough surfaces will cause components to fail

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] According to the ingredients and compositions shown in Table 2, planar buffer layers 1-33 (thickness 20 μm) were prepared respectively.

[0041] Table 2

[0042] flat

[0043] 5

[0044] 31

[0045] Flat Buffer Property Measurements

Embodiment 2

[0047] For the flat buffer layer 1-33 prepared in Example 1, measure its softening temperature and its coefficient of thermal expansion (CTE) in the temperature range between 20°C and 300°C, please refer to Table 3:

[0048] table 3

[0049] flat buffer layer

Softening temperature (℃)

Coefficient of thermal expansion (10 -6 / °C)

1

897

2.9

2

925

3.1

3

827

4.4

4

741

3.8

5

866

5.8

6

875

5.4

7

906

4.3

8

892

5.1

9

800

5.3

10

861

1.8

11

894

3.7

12

732

2.8

13

736

4.2

14

822

4.3

15

840

4.2

16

725

3.6

17

718

4.0

18

736

3.9

19

736

3.8

[0050] 20

876

...

Embodiment 3

[0054] Take a ceramic substrate as the ceramic body of the subsequent ceramic substrate. Please refer to Table 4 for the properties of the ceramic substrate used:

[0055] Table 4

[0056] ingredients

Ra(nm)

CTE(10 -6 / °C)

Warpage(%)

Al 2 o 3 (ceramic body A)

288.3

8

0.15

Mullite (ceramic host B)

447.6

4

0.21

[0057] Next, according to the flat buffer layer compositions 1, 5, 7, 10, 16, 21, 26, 32, and 33 described in Table 1, a flat buffer layer is formed on the ceramic body A or B to obtain the ceramic substrate 1- 10. Finally, the average surface roughness (Ra) and warpage (warpage) of the ceramic substrates 1-10 were measured. Please refer to Table 5 for the results.

[0058] table 5

[0059] ingredients

Ra(nm)

CTE(10 -6 / °C)

Warpage(%)

Ceramic Substrate 1

(ceramic body B & flat buffer layer 1)

13.6

1.1

0.28

Ceramic Su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
softening pointaaaaaaaaaa
softening pointaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a ceramic substrate and a manufacturing method thereof. The ceramic substrate comprises a ceramic main body and a flat buffer layer configured on the ceramic main body, and the thermal expansion coefficient CTEm of the ceramic main body and the thermal expansion coefficient CTEp of the flat buffer layer meet the relational expression (1): the absolute value of CTEm minus CTEp is not less than 3 multiplied by 10-6 / DEG C, thereby maintaining the warpage of the ceramic substrate below 0.5%.

Description

technical field [0001] The invention relates to a ceramic substrate, in particular to a ceramic substrate with a flat surface. Background technique [0002] Ceramic materials have been widely used in communications, computers, medicine, and even military applications in recent years due to their good mechanical, thermal conductivity, and high temperature resistance, especially excellent dielectric properties. Among them, ceramic substrates made of ceramic materials can be further applied to the preparation process of semiconductors, storage elements, light-emitting diodes, and optoelectronic products, such as processing various micro-electromechanical devices on the surface of ceramic substrates or as solar cells, light-emitting diodes, etc. The carrier substrate is one of the very popular applications at present. [0003] However, one of the disadvantages of traditional ceramic materials is that their surface roughness is too high, and there will be many pits of different ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/81C04B41/85
Inventor 叶昱昕林泽胜简仁德
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com