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Low thermal expansion coefficient silicon dioxide/polyimide composite film and preparation method thereof

A low thermal expansion coefficient and polyimide technology, which is applied in the field of polyimide film preparation, can solve the problems of unsatisfactory effects and small reductions, and achieve good thermal stability and dielectric properties. The effect of adjusting the thermal expansion coefficient and reducing the thermal expansion coefficient

Pending Publication Date: 2019-10-25
CHONGQING UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these two modification methods have certain effects, the reduction range is not very large, and the effect is not very ideal.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Low thermal expansion coefficient SiO of the present invention 2 / Polyimide composite film, made of polyimide and SiO 2 Compound prepared;

[0019] The polyimide is composed of 1,2,4,5-pyromellitic dianhydride (PMDA) and 2-(4-aminophenyl)-5-amino-benzoxazole (BOA) according to conventional principles. Prepared by in-situ polymerization;

[0020] The SiO2 accounts for 40% of the total weight of 1,2,4,5-pyromellitic dianhydride and 2-(4-aminophenyl)-5-amino-benzoxazole monomer.

[0021] The specific preparation method is:

[0022] a. First, dissolve 3.81g of 2-(4-aminophenyl)-5-amino-benzoxazole monomer in 50ml polar solvent N, N-dimethylformamide DMF; then add the particle size 30-100nm 3g SiO 2 Powder, then add 3.69g pyromellitic anhydride in 4 times to mix, the resulting mixed solution is stirred and reacted at room temperature for 4.5h to obtain polyimide precursor PAA and SiO 2 The mixed solution, namely PAA / SiO 2 / DMF;

[0023] b. Coat the obtained in step a with PAA / SiO 2 ...

Embodiment 2

[0025] Low thermal expansion coefficient SiO of the present invention 2 / Polyimide composite film, made of polyimide and SiO2 composite;

[0026] The polyimide is composed of 1,2,4,5-pyromellitic dianhydride (PMDA) and 2-(4-aminophenyl)-5-amino-benzoxazole (BOA) according to conventional principles. Prepared by in-situ polymerization;

[0027] The SiO 2 The proportion of the total weight of 1,2,4,5-pyromellitic dianhydride and 2-(4-aminophenyl)-5-amino-benzoxazole monomer is 30%.

[0028] The specific preparation method is:

[0029] a. First, dissolve 3.81g of 2-(4-aminophenyl)-5-amino-benzoxazole monomer in 50mL polar solvent N,N-dimethylformamide DMF; then add the particle size 30-100nm 2.25g SiO 2 Powder, then add 3.69g pyromellitic anhydride in 4 times to mix, the resulting mixed solution is stirred and reacted at room temperature for 4h to obtain a mixed solution of polyimide precursor PAA and SiO2, namely PAA / SiO 2 / DMF; b. Coat the obtained in step a with PAA / SiO 2 The glass p...

Embodiment 3

[0031] Low thermal expansion coefficient SiO of the present invention 2 / Polyimide composite film, made of polyimide and SiO 2 Compound prepared;

[0032] The polyimide is composed of 1,2,4,5-pyromellitic dianhydride (PMDA) and 2-(4-aminophenyl)-5-amino-benzoxazole (BOA) according to conventional principles. Prepared by in-situ polymerization;

[0033] The SiO 2 The proportion of the total weight of 1,2,4,5-pyromellitic dianhydride and 2-(4-aminophenyl)-5-amino-benzoxazole monomer is 20%.

[0034] The specific preparation method is:

[0035] a. First, dissolve 3.81g 2-(4-aminophenyl)-5-amino-benzoxazole monomer in 50mL polar solvent N, N-dimethylformamide DMF; then add the particle size of 30-100nm 1.5g SiO 2 Powder, then add 3.69g pyromellitic anhydride in 4 times to mix, the resulting mixed solution is stirred and reacted at room temperature for 4h to obtain polyimide precursor PAA and SiO 2 The mixed solution of PAA / SiO2 / DMF;

[0036] b. Place the glass plate coated with the PAA / Si...

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Abstract

The invention discloses a low thermal expansion coefficient SiO2 / polyimide composite film and preparation method thereof. The composite film is prepared from a basis material of rigidity polyimide andSiO2 through in-situ composite, and the basis polyimide is prepared from 1,2,4,5-Bbenzenetetracarboxylic anhydride (PMDA) and 2-(4-aminophenyl)-5-amidogen-benzoxazole (BOA) through polycondensation.According to the low thermal expansion coefficient SiO2 / polyimide composite film and the preparation method thereof, the preparation technology is simple, and SiO2 is well dispersed in the basis material. Compared with the prior art, according to the SiO2 / polyimide composite film, the rigidity PMDA and the BOA structural units are introduced in the molecular structure of the basis material, and meanwhile the high thermostability and the low thermal expansion coefficient of the prepared SiO2 / polyimide composite film are presented through the high heat resistance of the BOA. The requirements ofheating matching of silicon-based materials in the aspect of integrated circuit and chip package technology can be well met, the low thermal expansion coefficient SiO2 / polyimide composite film can beused in the microelectronics industry, for example, insulating layers in multilevel-multilayer metallization of the electronic packaging field; and the low thermal expansion coefficient SiO2 / polyimidecomposite film can also be used for insulating layers in solar cells. Thus, the low thermal expansion coefficient SiO2 / polyimide composite film has wide application prospects.

Description

Technical field [0001] The invention relates to the preparation field of polyimide films, in particular to a low thermal expansion coefficient SiO 2 / Polyimide composite film and its preparation method. Background technique [0002] Polyimide (PI) is a special engineering material with high strength, high modulus, high heat resistance and low dielectric constant. It is currently widely used in aerospace, membrane separation and microelectronics fields. Especially in the field of microelectronics, polyimide is used as an insulating base film material for flexible printed circuits. In these microelectronic devices, polyimide is usually combined with other base materials (such as inorganic materials such as copper, glass or silicon wafers), so the coefficient of thermal expansion (CTE) of the polyimide film needs to be close to that of the base material . Compared with these inorganic materials, the coefficient of thermal expansion (CTE) of polyimide is much larger. Ordinary pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L79/08C08K3/36C08G73/10
CPCC08J5/18C08G73/1085C08G73/1067C08K3/36C08J2379/08
Inventor 陈善勇李璐李科柏东宇程江
Owner CHONGQING UNIV OF ARTS & SCI
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