The invention discloses a low
thermal expansion coefficient SiO2 /
polyimide composite film and preparation method thereof. The
composite film is prepared from a basis material of rigidity
polyimide andSiO2 through in-situ composite, and the basis
polyimide is prepared from 1,2,4,5-Bbenzenetetracarboxylic anhydride (PMDA) and 2-(4-aminophenyl)-5-
amidogen-
benzoxazole (BOA) through polycondensation.According to the low
thermal expansion coefficient SiO2 / polyimide
composite film and the preparation method thereof, the preparation technology is simple, and SiO2 is well dispersed in the basis material. Compared with the prior art, according to the SiO2 / polyimide composite film, the rigidity PMDA and the BOA structural units are introduced in the molecular structure of the basis material, and meanwhile the high
thermostability and the low
thermal expansion coefficient of the prepared SiO2 / polyimide composite film are presented through the
high heat resistance of the BOA. The requirements ofheating matching of
silicon-based materials in the aspect of
integrated circuit and
chip package technology can be well met, the low thermal expansion coefficient SiO2 / polyimide composite film can beused in the
microelectronics industry, for example, insulating
layers in multilevel-multilayer metallization of the
electronic packaging field; and the low thermal expansion coefficient SiO2 / polyimidecomposite film can also be used for insulating
layers in solar cells. Thus, the low thermal expansion coefficient SiO2 / polyimide composite film has wide application prospects.