Semiconductor assembly and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the field of its combination and its manufacture, in the field of insulated gate bipolar transistor components, can solve problems such as chip bending deformation

Inactive Publication Date: 2010-12-29
NIKO SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The purpose of the present invention is to overcome the defects of existing semiconductor components and provide a new type of semiconductor component. One of the technical problems to be solved is to maintain the structural strength of the semiconductor substrate and avoid the problem of chip bending and deformation. practical

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  • Semiconductor assembly and manufacturing method thereof
  • Semiconductor assembly and manufacturing method thereof
  • Semiconductor assembly and manufacturing method thereof

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Embodiment Construction

[0082] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, characteristics and methods of the semiconductor component and its manufacturing method proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. Its effect is described in detail below.

[0083] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. For convenience of description, in the following embodiments, the same elements are denoted by the same numbers.

[0084] Figure 1D and Figure 1D-1 They are respectively schematic cross-sectional views of a planar field effect transistor and a trench field effect transistor according to an embodiment of the p...

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Abstract

The invention relates to a semiconductor assembly and a manufacturing method thereof. The semiconductor assembly comprises a semiconductor substrate, a doping area, an electric contact layer and a metal oxide semiconductor unit. The semiconductor substrate is provided with a first surface, a second surface and at least one channel, wherein the first surface and the second surface are opposite to each other, and the channel extends from the second surface to the interior of the semiconductor substrate. The doping area is located in the semiconductor substrate at the bottom of the channel. Doping substances in the doping area have the same conductive type as the doping substances in the semiconductor substrate. The concentration of the doping substances in the doping area is higher than that of the doping substances of the semiconductor substrate. The electric contact layer is electrically connected with the doping area. The metal oxide semiconductor unit is located on the first surfaceof the semiconductor substrate.

Description

technical field [0001] The present invention relates to a semiconductor device (semiconductor device) and a manufacturing method thereof, in particular to a field-effect transistor component, a superjunction field-effect transistor component, and an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) component , combinations thereof and methods of manufacture thereof. Background technique [0002] Semiconductor components are components widely used in electronic products today. With the demand for thinner, smaller and higher performance of electronic devices and the development of semiconductor process technology, metal oxide semiconductor field effect transistor (MOSFET) and the insulation of metal oxide semiconductor field effect transistor and bipolar junction transistor (Bipolar Junction Transistor, BJT) Gate bipolar transistor (IGBT) has become the mainstream of high-power components (POWERDEVICE). [0003] High-power components will inevitably...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L29/78H01L29/06H01L29/36H01L21/8234H01L21/336
Inventor 涂高维
Owner NIKO SEMICON
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