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Antireflective coating compositions

A technology of anti-reflection and composition, applied in the direction of polyether coating, polyester coating, coating, etc.

Inactive Publication Date: 2011-01-26
AZ ELECTRONICS MATERIALS USA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, it is not possible to achieve precise optical parameters using materials with a single chromophore or a single polymer

Method used

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  • Antireflective coating compositions
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  • Antireflective coating compositions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0121] In a 1 L flask equipped with a condenser and a mechanical stirrer, 1.0 mol of pyromellitic dianhydride was suspended in 300 g of acetonitrile. Then an equimolar amount of ethylene glycol was added. The mixture was heated to gentle reflux under nitrogen. The reaction was continued for 24 hours. After the reaction mixture had cooled to room temperature, stirring was continued for several hours. The white precipitate formed during the reaction was collected by suction and washed thoroughly with acetonitrile. The solid was dried in a vacuum oven for 1 day. Charge 300 g of propylene oxide and 300 g of acetonitrile into a 2 L flask with a magnetic bar and condenser. To this flask was added 52 g of the solid prepared above and 2.5 g of benzyltriethylammonium chloride. Under nitrogen, the reaction mixture was heated to gentle reflux. The reaction lasted for 20 hours. After cooling to room temperature, the reaction solution was slowly poured into a large amount of water w...

Embodiment 2

[0123] 400 g tetramethoxymethyl glycoluril, 132 g neopentyl glycol and 51.4 g 3,4,5-trimethoxybenzyl alcohol and 1170 g PGMEA were charged into a 2000 mL flask equipped with a thermometer, cold water condenser and mechanical stirrer. The reaction mixture was heated to 85 °C. After addition of a catalytic amount of p-toluenesulfonic acid monohydrate, the reaction is maintained at this temperature for 6 hours. The reaction solution was then cooled to room temperature and filtered. The polymer was precipitated in deionized water and collected in a filter, washed thoroughly with water and dried in a vacuum oven (200 g obtained). The resulting polymer had a weight average molecular weight of about 8,000 g / mol and a polydispersity of 3.

Embodiment 3

[0125] Charge 1000 g tetramethoxymethyl glycoluril, 500 g neopentyl glycol and 3000 g PGMEA into a 5000 mL flask equipped with a thermometer, cold water condenser and mechanical stirrer. The reaction mixture was heated to 85 °C. After adding a catalytic amount of p-toluenesulfonic acid monohydrate, the reaction was continued at this temperature for 8.0 hours. The reaction solution was then cooled to room temperature and filtered. The polymer was precipitated in deionized water and collected in a filter, washed thoroughly with water and dried in a vacuum oven (400 g obtained). The resulting polymer had a weight average molecular weight of about 8,000 g / mol and a polydispersity of 3.

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Abstract

The present invention relates to anti reflective coating compositions.

Description

technical field [0001] The present invention relates to the field of antireflective coatings and to methods of forming images on substrates using antireflective coating compositions. Background technique [0002] In the manufacture of semiconductor devices, an integrated circuit substrate is coated with a thin film of photopatterning resist, exposed to optical radiation, and developed to form a photopatterning resist image on the integrated circuit substrate. The photoresist image can, for example, comprise lines and spaces, wherein the removed part of the photopattern forms the photoresist forming space and the remaining part forms the lines. The photoresist image is transferred to the integrated circuit substrate by modifying the exposed portion of the substrate during passage. This modification can be performed by removing portions of the substrate by etching, by implanting atomic species into the substrate, or by other methods known to those skilled in the art. During ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D167/00C09D171/00G03F7/09H01L21/00
CPCC08L71/00C09D167/00C08G65/2615C09D171/00C08L67/00G03F7/091C08G63/20C09D5/00C09D133/04
Inventor 庄弘单槛会向中吴恒鹏殷建
Owner AZ ELECTRONICS MATERIALS USA CORP