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Deep silicon etching method

A technology of deep silicon etching and surface etching, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of complex structure and inconvenient maintenance of low-frequency pulse power supply equipment, and achieve good side wall protection effect and large Effect of selectivity ratio, fast etch rate

Active Publication Date: 2012-12-26
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0008] However, the problem is that in the above process, the structure of the equipment using low-frequency pulse power supply is relatively complicated, and it is not easy to maintain

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  • Deep silicon etching method
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[0035] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0036] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0037] Secondly, the present invention is described in detail in conjunction with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the sectional view showing the structure of the device will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. The protection scope of the present in...

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Abstract

A deep silicon etching method includes firstly etching a silicon (300) surface (300a) uncovered by a photoresist layer (301) to form an etched surface (302) and sidewalls (303) substantially vertical to the etched surface (302), and further includes the following steps: a deposition step which is an isotropic deposition; a first etching step which is an anisotropic etching step; a second etching step which is an isotropic etching step; and cyclically repeating the deposition step, the first etching step and the second etching step until a predetermined etching depth is reached. The method does not require the use of a complex equipment such as a low frequency pulsed power or the like, and facilitates equipment maintenance and helps reduce equipment costs.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a deep silicon etching method. Background technique [0002] As micro-electromechanical devices and micro-electromechanical systems (Micro Electromechanical System, MEMS) are more and more widely used in the fields of automobiles and consumer electronics, and TSV (Through Silicon Via) through hole etching (Through Silicon Etch) technology is With broad prospects in the packaging field in the future, the deep silicon etching process has gradually become one of the hottest processes in the MEMS manufacturing field and TSV technology. [0003] The deep silicon etching process is actually a plasma dry etching process. Compared with the general silicon etching process, its main difference is that the etching depth is much larger than the general silicon etching process. The etching depth of a general silicon etching process is usually less than 1 micron, while the etching d...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306
CPCH01L21/30655
Inventor 周洋
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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