Deep silicon etching method

Abstract

The invention provides a deep silicon etching method. The method comprises a step of etching a silicon chip surface which is not covered by a photoresist layer first to form an etched surface and a side wall which is vertical to the etched surface basically; and the method also comprises the following steps of: a first depositing step, namely performing isotropic deposition for covering a barrierlayer on the etched surface, the side wall and the surface of the photoresist layer; a first etching step, namely performing anisotropic etching for removing the barrier layer covered on the etched surface so as to expose the etched surface, wherein the photoresist layer is prevented from being etched by the barrier layer covered on the photoresist layer; a second etching step, namely performing the isotropic etching for etching the exposed etched surface, wherein the side wall is prevented from being etched by the barrier layer covered on the side wall and the photoresist layer is not damaged in the isotropic etching; and repeating the depositing step, the first etching step and the second etching step circularly until reaching a predetermined etching depth. The method does not need complex equipment such as a low-frequency pulse power supply and the like, contributes to maintenance, and reduces equipment cost.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a deep silicon etching method. Background technique [0002] As micro-electromechanical devices and micro-electromechanical systems (Micro Electromechanical System, MEMS) are more and more widely used in the fields of automobiles and consumer electronics, and TSV (Through Silicon Via) through hole etching (Through Silicon Etch) technology is With broad prospects in the packaging field in the future, the deep silicon etching process has gradually become one of the hottest processes in the MEMS manufacturing field and TSV technology. [0003] The deep silicon etching process is actually a plasma dry etching process. Compared with the general silicon etching process, its main difference is that the etching depth is much larger than the general silicon etching process. The etching depth of a general silicon etching process is usually less than 1 micron, while the etching d...

AI Technical Summary

Problems solved by technology

[0008] However, the problem is that in the above process, the structure of the equipment usi

Images