Probe positioning structure of four-probe instrument

Abstract

The invention discloses a probe positioning structure of a four-probe instrument, which comprises an insulated probing head and four probes, wherein each probe is fixedly sleeved an elastic insulated spacer ring the inner diameter of which is matched with the diameter of the probe, the sum of wall thicknesses of the elastic insulated spacer rings sleeved on two adjacent probes is equal to the value obtained by subtracting the diameter of one probe from the center distance between the two adjacent probes; and four elastic insulated spacer rings are arranged at the same height on the probes, the distance from the elastic insulated spacer ring to the lower end of the metal probe accounts for 1 / 4 to 1 / 2 of the total length of the probe; simple technology, high spacer ring precision and low cost can be achieved in case that the probe spacer rings are made of tetrafluoro elastic insulated material, and each probe is sleeved with the tetrafluoro elastic insulated ring, thereby not only separating the four probes from each other quite stably and increasing the strength of the probes, but also precisely controlling the mechanical shift of the probes to further guarantee the electric insulating property between the probes as well as the constant pressure elasticity and excellent electric contact of the probes.

Description

Technical field: [0001] The invention relates to a four-probe tester for measuring the resistance and resistivity of silicon wafers, in particular to a probe test part of the four-probe tester. Background technique: [0002] Solar energy is a clean, non-polluting and renewable energy that can be recycled. The solar cell manufacturing technology that converts solar energy into electrical energy is an important technology for effectively utilizing solar energy. At present, diffusion is a process link in the manufacture of the P-N junction, the core component of solar cell photoelectric conversion, and a key technology in solar cell manufacturing. The measurement of resistance is one of the important parameters to ensure the quality of diffusion, which reflects the concentration of remaining impurities in the material after impurity compensation. During the measurement, four metal probes are pressed on the surface of the silicon wafer, and the external current flows into the s...

AI Technical Summary

Problems solved by technology

Although this solution is superior to that before the improvement, the metal probe lacks constant pressure elasticity during the test, and the electrical contact is difficult to guarantee. At the same time, it is very difficult to drill four positioning holes on the artificial gemstone according to the predetermined requirements. , not only the processing cost is high, but also the position accuracy between the four small holes is difficult to meet the requirements

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