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108results about How to "Ensure electrical insulation" patented technology

Armature for electric rotating machine and method of manufacturing same

Provided is an armature for an electric rotating machine wherein the eddy current loss can be reduced while enhancing the space factor of coil. The present invention relates to an armature (2) for an electric rotating machine including a cylindrical core (11) where a plurality of slots (12) extending in the axial direction are positioned in a dispersion manner in the circumferential direction, and a coil (21) wound in the slots (12) each of which is formed in such a manner that the circumferential width of the inner circumferential opening of the slot (12) is narrower than the inner circumferential width of the slot, the circumferential width of a linear conductor constituting the coil is wider than the circumferential width of the inner circumferential opening, the coil end (23) of the coil (21) on one side in the axial direction thereof is a bent coil end (24); which is bent radially inward and provided with a radial conductor (25), and at a radial position in the radial conductor (25) corresponding to the inner circumferential opening, a narrow recess (32) which is recessed for other portion of the radial conductor (25) is provided so that the circumferential width becomes narrower than that of the inner circumferential opening.
Owner:AISIN AW CO LTD

High-heat-conductivity low-viscosity epoxy resin composite, and preparation method and application thereof

ActiveCN106519581AImprove flow propertiesIncrease filling volumeFilling materialsEpoxy resin composite
The invention discloses a high-heat-conductivity low-viscosity epoxy resin composite, and a preparation method thereof. The epoxy resin composite comprises, by volume, 25 to 60 parts of a first spherical heat-conducting filling material, 5 to 30 parts of a second spherical heat-conducting filling material and 30 to 70 parts of epoxy resin, wherein the median particle diameter of the first spherical heat-conducting filling material is no less than 30 [mu]m, and the median particle diameter of the second spherical heat-conducting filling material is no more than 20 [mu]m. The preparation method comprises the following steps: (1) subjecting the spherical heat-conducting filling materials to vacuum drying, then successively adding epoxy resin, a curing agent and the spherical heat-conducting filling materials into a planetary centrifugal mixer and carrying out mixing and defoaming; and (2) carrying out vacuum pumping and bubble removing and then carrying out curing molding. The invention has the advantages that the spherical heat-conducting filling materials with different particle sizes and proportions are used for compounding with the epoxy resin, so the filling density of the filling materials is improved, friction between the filling materials and between the filling materials and a matrix is reduced, and the processing flowing performance of the composite is obviously improved.
Owner:HUAZHONG UNIV OF SCI & TECH

Plasma sealing structure for discharge chamber of annular magnetic steel ring cutting field ion thruster

The invention provides a plasma sealing structure for a discharge chamber of an annular magnetic steel ring cutting field ion thruster. The plasma sealing structure comprises a ceramic ring, a shielding cover and a Z-shaped sealing ring; peripheral equipment comprises a grid assembly, an anode, an insulation supporting assembly and a supporting ring of the ion thruster, and the anode is of a stepped cylinder structure and comprises a large-diameter cylinder and a small-diameter cylinder; the shielding cover is installed on the outer wall of the upper end of the small-diameter cylinder of the anode, the ceramic ring is located below the shielding cover and fixed to the end face between the large-diameter cylinder and the small-diameter cylinder of the anode, and the shielding cover shieldspart of the end face of the ceramic ring and the inner wall face of the ceramic ring to realize shielding and realize electric insulation between the anode and the grid assembly; and the horizontal end face of one side of the Z-shaped sealing ring is fixed to the bottom face of the grid assembly, and the horizontal end face of the other side is compressed at the top end of the ceramic ring to complete plasma sealing of the discharge chamber. The problems of electric insulation between the grid assembly and the anode of the ion thruster in a long-term plasma environment and plasma sealing of the discharge chamber are solved.
Owner:LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH

Metallic oxide semiconductor thin film transistor and manufacturing method thereof

A metallic oxide semiconductor thin film transistor comprises a grid electrode, a grid electrode insulating layer and a metallic oxide semiconductor layer. The grid electrode insulating layer is located between the grid electrode and the metallic oxide semiconductor layer. The grid electrode insulating layer comprises a silicon oxynitride layer and a silicon oxide layer. The silicon oxynitride layer is located between the grid electrode and the silicon oxide layer. The silicon oxide layer is located between the silicon oxynitride layer and the metallic oxide semiconductor layer. The silicon oxide layer is provided with a first surface making contact with the silicon oxynitride layer and a second surface making contact with the metallic oxide semiconductor layer. The density of oxygen atoms, close to the second surface, of the silicon oxide layer is larger than the density of oxygen atoms, close to the first surface, of the silicon oxide layer. According to the metallic oxide semiconductor thin film transistor, the process time is shortened, the problem that a glass substrate can be easily broken due to the excessively large film forming stress is effectively solved at the same time, and the metallic oxide semiconductor thin film transistor is beneficial for reducing influences of the grid electrode insulating layer on the oxygen content in the metallic oxide semiconductor layer.
Owner:KUSN INFOVISION OPTOELECTRONICS

Silicon controlled thyristor device micro slot group composite phase change integrated cooling heat dissipation method and device

The invention provides a silicon controlled thyristor micro slot group composite phase change integrated cooling heat dissipation method and device, relating to the heat dissipation technology. The method includes that micro dimension composite phase change heat transfer characteristic of thin liquid film evaporation and thick liquid film boiling of liquid in open composite phase change micro slot group in a micro slot group composite phase change heat remover is utilized to remove heat. The device is provided with a micro slot group composite phase change heat remover at the two sides of single silicon controlled thyristor respectively, the silicon controlled thyristor removes heat in multiple groups, each group is provided with a wall type condenser heat dissipation structure, heat emitted by each silicon controlled thyristor can be taken out respectively and is carried into the wall type condenser by steam, condensation heat dissipation is carried out in condensation micro slot thereof, heat is taken away by external cooling water or air, condensed liquid reflows to the micro slot group composite phase change heat remover, and heat dissipation of silicon controlled thyristor with high power, large quantity and strong electric field is realized. The invention is safe and reliable, has small area, high heat-flow density, strong temperature control capability, high efficiency and low energy consumption and can be applicable to integrated cooling heat dissipation of a plurality of high power heat-emitting silicon controlled thyristors.
Owner:INST OF ENGINEERING THERMOPHYSICS - CHINESE ACAD OF SCI

Pollution-free heating tube device of vertical vacuum ion film plating machine

The invention discloses a pollution-free heating tube device of a vertical vacuum ion film plating machine. The pollution-free heating tube device comprises a heating tube assembly, a corrugated tube assembly, a corrugated tube supporting seat assembly and a lifting mechanism, wherein the heating tube assembly comprises heating tubes, the upper ends of the heating tubes are insulating conducting wire lead-out ends, heating tube flanges are slightly below the heating tubes and are downwardly connected with the corrugated tube assembly, the corrugated tube assembly is downwardly connected with the corrugated tube supporting seat assembly, the corrugated tube supporting seat assembly is downwardly communicated with a furnace through heating tube access ports formed in a top plate of a furnace body, and the heating tubes penetrate through the hollow internal cavities of the corrugated tube assembly and corrugated tube supporting seat assembly, extend into the heating tube access ports in the top plate of the furnace body, enter the furnace and are connected with the lifting mechanism through the heating tube flanges. The heating tubes are not located in a film plating room during film plating, and then, plated layers cannot be attached and remained onto the heating tubes, so that the problem of secondary pollution caused by the heating tubes is solved; the pollution-free heating tube device has the advantages that the structure is simple and compact, and the work of heating tube cleaning is avoided, the quality of the plated layers is improved, the work efficiency is increased, and the production cost is reduced.
Owner:DONGGUAN HUICHENG VACUUM TECH
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