Improved PVD target

Abstract

A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

Description

technical field [0001] Embodiments of the present invention generally relate to a method and apparatus for physical vapor deposition (PVD), and more particularly to an improved PVD target and method of operation thereof. Background technique [0002] The manufacture of flat panel displays, solar panels and semiconductor devices relies on methods of depositing thin films of metals and nonmetals on substrates. PVD is one such method. [0003] PVD is generally performed in a high vacuum chamber and usually includes a magnetron sputtering process. Sputtering is performed by placing a target over a substrate, introducing a gas such as argon between the target and the substrate, and exciting the gas with a high voltage DC signal to generate ions that bombard the target. The target comprises the material to be deposited as a thin film on the substrate. As the ions bombard the target, the target atoms are dislodged and deposited on the substrate. Target atoms out of situ general...

AI Technical Summary

Problems solved by technology

Additionally, contamination of other surfaces in the PVD chamber 100 can lead to contamination of many substrates throughout the lifetime of the target assembly

This longer term contamination problem results from the spalling of particles of PVD deposited material from shield surface 141 and target sidewall 115 when a layer of bond coat contamination is present thereon.

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