Semiconductor-based large-area flexible electronic devices

A technology of electronic devices and semiconductors, applied in the field of large-area flexible electronic devices based on semiconductors

Inactive Publication Date: 2011-02-23
阿米特·戈亚尔
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also, for some applications semiconductor surfaces/films/wafers need to be

Method used

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  • Semiconductor-based large-area flexible electronic devices
  • Semiconductor-based large-area flexible electronic devices
  • Semiconductor-based large-area flexible electronic devices

Examples

Experimental program
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Effect test

Embodiment 1

[0097] Example 1: [100] uniaxially textured metal substrates were prepared by sequentially pressing or forging cubic metals or alloys by compression to large total deformation and then recrystallization annealing. For example, a NiW alloy with 3-9 at% W is used, compressed to 90% deformation by uniaxial extrusion, and then annealed in a furnace at a temperature above the primary recrystallization temperature of the alloy. The formed primary recrystallization texture is [100] texture. By raising the annealing temperature to high temperatures close to 1000°C, an average grain size greater than 100 µm is formed. An epitaxial buffer layer is then deposited on the substrate. For example, chemical vapor deposition (CVD) is used to deposit epitaxial TiN layers at deposition temperatures in the range of 300°C to 600°C. An epitaxial Si layer is then deposited using a CVD-type process at a deposition temperature in the range of 300°C to 900°C. This results in the formation of a [100]...

Embodiment 2

[0098] Example 2: [110] uniaxially textured metal substrates were prepared by sequentially pressing cubic metals or alloys by compression to large total deformation and then recrystallization annealing. For example, a NiW alloy with 3-9 at% W is used, compressed to 90% deformation by uniaxial extrusion, and then annealed in a furnace at a temperature above the primary recrystallization temperature of the alloy. The primary recrystallization texture formed is [110] texture. By raising the annealing temperature to high temperatures close to 1000°C, an average grain size greater than 100 µm is formed. An epitaxial buffer layer is then deposited on the substrate. For example, chemical vapor deposition (CVD) is used to deposit epitaxial TiN layers at deposition temperatures in the range of 300°C to 600°C. An epitaxial Si layer is then deposited using a CVD-type process at a deposition temperature in the range of 300°C to 900°C. This results in the formation of a [110] uniaxially...

Embodiment 3

[0099] Example 3: Figure 10 shows a crystallographically textured, flexible NiW alloy in cross-section with a textured Si semiconductor layer above the alloy and an epitaxial buffer layer of textured TiN in between. An idealized schematic diagram of . This device and figure 1 A and B depict identical devices. [100] textured biaxially textured Ni-3at%W was prepared by continuous rolling of a powder metallurgically derived alloy coil from a thickness of about 120 mils to a foil thickness of about 2 mils or 50 microns. The as-rolled crystallographic texture of the foil or strip is the standard Cu-type rolled texture of greatly deformed FCC metals. After the strip is degreased and dried, the strip is loaded into a reel-to-reel high vacuum (10 -8 entrust) in the room. Strips in ~3×10 -7 Torr of hydrogen sulfide gas is pulled through the hot zone of the furnace at such a rate that each part is heated to 1250°C within twenty minutes to form sulfur c(2×2) super structure. Aft...

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Abstract

Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45 DEG -rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices,, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Description

[0001] Statement Regarding Federally Sponsored Research or Development [0002] This invention was made with Government support under Contract No. DE-AC05-000R22725 awarded by the US Department of Energy. The government has certain rights in this invention. field of invention [0003] The present invention relates to the fabrication of high performance electronic devices including various types of semiconductors and articles derived therefrom. Background of the invention [0004] This international application is the PCT application corresponding to US Patent Application Serial No. 12 / 011,450, filed January 28,2008. US Patent Application Serial No. 12 / 011,450 is a continuation-in-part of US Patent Application Serial No. 11 / 715,047, filed March 8, 2007. International application PCT / US2008 / 002944 is related to US patent application Ser. No. 11 / 715,047. US Patent Application Serial No. 12 / 011,450 is also a continuation-in-part of unpublished US Patent Application Serial No....

Claims

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Application Information

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IPC IPC(8): H01L29/00H01L31/0687
CPCH01L31/182H01L21/02521H01L21/02488H01L31/0392Y02E10/546H01L21/02425H01L31/0368Y02E10/541H01L31/18H01L21/02439H01L21/02532H01L31/0322H01L21/02433H01L21/02609H01L31/0687Y02E10/544H01L21/02568H01L31/03925H01L31/03926H01L31/03928Y02E10/547Y02P70/50
Inventor 阿米特·戈亚尔
Owner 阿米特·戈亚尔
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