Packaging structure of N substrate diode half bridges with common anodes in TO-220

Abstract

The invention provides a packaging structure of N substrate diode half bridges with common anodes in TO-220, which is characterized by comprising an insulating heat conductive aluminium oxide ceramic substrate, wherein the right side of the aluminium oxide ceramic substrate is provided with two mutually independent metal layers; the opposite side of the aluminium oxide ceramic substrate is provided with at least a metal layer; the metal layers at the opposite side of the aluminium oxide ceramic substrate are connected with heating panels; the two metal layers at the right side of the aluminium oxide ceramic substrate are respectively connected with left leads and right leads; the N poles of two diodes are respectively connected on the left leads and the right leads and are two cathodes; and the P poles of the two diodes are respectively connected on the middle leads by aluminium wires and are common anodes. The packaging structure has simple process, low manufacturing difficulty and stable yield and reliability, ensures the diodes to have high effective heat release and is suitable for using the N substrate diodes to assemble the half-bridge devices with common anodes.

Description

technical field [0001] The invention relates to a TO-220 package structure of a common anode half-bridge composed of N base material Schottky diodes or fast recovery diodes, and belongs to the technical field of package structure of diode devices. Background technique [0002] With the increasing popularity and wide application of new energy sources and switching power supplies, it is necessary to use a large number of high-performance high-frequency and high-power rectifier devices. In electronic circuit design, rectifier devices in TO-220 package form are more widely used. In order to make full-wave rectification and full-bridge rectification circuits economical, simple and reasonable in design and use, it is necessary to use common cathode and common anode half-bridge rectifiers in the TO-220 package, and the performance of the two must be completely consistent. Such as figure 1 As shown, the full-bridge rectifier circuit consists of four rectifier diodes to form a comm...

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Problems solved by technology

This kind of packaging structure has complicated process, high manufacturing difficulty, unstable yield rate and reliability, and the yield rate can only reach 60% to 85%, and because the contact area between the copper pad 5 and the middle lead 12 is small, the diode’s The effective heat dissipation is greatly reduced. Compared with the common-cathode half-bridge device packaged with the same specification diode, the current used is reduced by 20-30%. As a result, the common-anode and common-cathode half-bridge devices packaged with the same specification diode cannot be used due to inconsistent performance. matching use

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