Interconnection packaging method of image sensor

Abstract

The invention discloses an interconnection packaging method of a COMS (complementary metal oxide semiconductor) image sensor. The method comprises the following steps: manufacturing a conducting channel at an area, which is used for manufacturing packaging wiring, on the surface of a wafer device; then manufacturing an image sensor at an area, which is used for manufacturing the device, on the surface of the wafer device; manufacturing a linkage structure used for connecting electrically the conducting channel and the image sensor at the area used for manufacturing the packaging wiring; and finally etching at the other side of the wafer, and forming a silicon through hole conducted with the conducting channel. The method also comprises: filling and doping silicon polycrystal or metal in a channel, so that the conducting channel and a conducting embolism of the CMOS image sensor are arranged to be in electrical contact, and the conducting channel is interconnected with the metal layer and electrode of the CMOS image sensor. By the method provided by the invention, the silicon through-hole method is improved, etching is carried out more easily, depth-to-width ratio of the silicon through hole is reduced, filling of a silicon through-hole insulating layer and the conducting metal is much easier, and the yield of finished products is improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing technology, in particular to an interconnect packaging method of an image sensor. Background technique [0002] Photosensitive integrated circuits are an important part of image sensors and are widely used in digital cameras, digital video cameras, mobile phones and many other portable devices. Generally speaking, an image sensor is a semiconductor device that converts optical image signals into electrical signals for storage and transmission. Image sensors can be generally classified into two types, namely, a charge-coupled device (CCD, Charge-coupled Device) and a complementary metal oxide semiconductor (CMOS, Complementary Metal Oxide Semiconductor). Both use photodiodes for photoelectric conversion to convert optical images into electrical signals, and the main difference is the way the signals are transmitted. The CCD image sensor transmits electrical signals through continuous control of th...

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Problems solved by technology

[0023] In view of this, the technical problem solved by the present invention is: the use of through-silicon via method needs to etch through different materials of each layer, which causes the difficulty of etching control, and forms a larger depth and aspect ratio of through-silicon vias, which is not conducive to Subsequent insulating film deposition and metal filling process

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