External cavity semiconductor laser

Abstract

The invention discloses an external cavity semiconductor laser which comprises a tapered amplifier, a grating, an F-P (Fabry-Perot) cavity and optical isolators. In the invention, by adopting the external cavity semiconductor laser, the laser emitted by the tapered amplifier is diffracted by the grating and transmitted by the F-P cavity after passing through the first optical isolator, and then the laser enters and returns from the rear end surface of the tapered amplifier after passing through the second optical isolator, thus forming optical feedback. By utilizing the grating external cavity semiconductor laser, narrow linewidth (less than 150kHz) laser output is realized without a complicated, huge and expensive feedback locking electronic system inside and outside a cavity, thus the frequency of the laser is more stable and easy to tune and control, and meanwhile stable high-power output is obtained.

Description

technical field [0001] The invention relates to semiconductor laser technology, in particular to a high-power external cavity semiconductor laser based on F-P cavity feedback enhancement. Background technique [0002] Semiconductor lasers, including distributed feedback (DFB) and external cavity semiconductor lasers, are important laser light sources in scientific research and industry. However, the output spectrum of external cavity semiconductor lasers is usually very wide, generally reaching hundreds of kilohertz or even several megahertz. DFB semiconductor lasers Often have a wider line width, the existence of such a wide line width is far from the application requirements of many occasions. [0003] In order to obtain high-power narrow-linewidth laser output, two methods are generally used at present: one can use a high-power laser tube. The narrow linewidth laser output is obtained by using the laser tube with electrical feedback or optical feedback. The other is to ...

AI Technical Summary

Problems solved by technology

[0006] 1. Use high-power laser tube: expensive, and the maximum power is limited

[0007] 2. Use the combination of external cavity semiconductor laser and tapered amplifier: the main laser needs to be coupled into the TA with a cross-sectional area of ​​several square microns, which is difficult to operate and has poor stability. The coupling efficiency greatly affects the laser output power

However, the method of electrical feedback is more difficult, and the system is huge and complex

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