Polishing solution for electrochemical mechanical polishing of hard disk NiP
A technology of mechanical polishing and polishing liquid, which is applied in the field of polishing liquid for electrochemical mechanical polishing, and can solve the problems of different polishing mechanisms and different polishing mechanisms.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0014] Embodiment 1: the polishing liquid formula is: lactic acid 3%wt, potassium chloride 0.5%wt, ethylenediamine 1%wt, lauryl ammonium sulfate 0.1%wt, all the other are water, use KOH2.5%wt to adjust pH Adjust to 5.0.
[0015] The polishing power supply voltage is 8V, the polishing pressure is 0.3psi, the flow rate of the polishing liquid is 100ml / min, and the rotational speed of the polishing table and the holder is 40 rpm.
[0016] The polishing rate reaches 560nm / min, and the surface roughness Ra reaches 0.5nm.
Embodiment 2
[0017] Embodiment 2: The formula of the polishing liquid is: 6% wt of citric acid, 1% wt of potassium nitrate, 1% wt of ammonia, 0.1% wt of ammonium lauryl sulfate, and the rest is water, and the pH is adjusted to 6.0 with 5% wt of KOH.
[0018] The polishing power supply voltage is 8V, the polishing pressure is 0.5pai, the polishing liquid flow rate is 100ml / min, and the polishing table and the holder rotate at 40 rpm.
[0019] The polishing rate reaches 520nm / min, and the surface roughness Ra reaches 0.4nm.
Embodiment 3
[0020] Embodiment 3: The formula of the polishing liquid is: 4%wt of lactic acid, 1%wt of potassium chloride, 1%wt of EDTA, 0.1%wt of ammonium lauryl sulfate, and the rest is water, and the pH is adjusted to 5.5 with 2.5%wt KOH.
[0021] The polishing power supply voltage is 8V, the polishing pressure is 0.3pai, the flow rate of the polishing liquid is 100ml / min, and the rotational speed of the polishing table and the holder is 40 rpm.
[0022] The polishing rate reaches 480nm / min, and the surface roughness Ra reaches 0.7nm.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com