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Method for controlling air inlet way in plasma processing technology

A plasma and processing technology, applied in the field of microelectronics, can solve problems such as unfavorable processing technology refinement, and achieve the effect of optimizing plasma processing technology and improving process results

Inactive Publication Date: 2011-06-08
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology has limitations in the control of the air intake method, which is not conducive to the refinement of the processing technology and better process results.

Method used

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  • Method for controlling air inlet way in plasma processing technology
  • Method for controlling air inlet way in plasma processing technology
  • Method for controlling air inlet way in plasma processing technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The plasma processing process in this embodiment is the etching of polycrystalline silicon wafers, including two etching process steps of BT and ME. image 3 As shown in the etching equipment, the gas inlet channel of the etching equipment is located in the upper center of the reaction chamber 1, including the central gas inlet 2, the edge gas inlet 3 and the gas inlet 4. During the process, the polysilicon wafer is placed. on the electrostatic chuck 5. It should be noted here that the number of air inlets is only for describing this embodiment, but is not limited to this embodiment, and an actual device may include a plurality of air inlets, that is, air inlet passages. In this embodiment, the condition parameters of the two etching steps of BT and ME adopt the prior art solution, and the method of controlling the air inlet mode of the present invention is adopted in the ME step.

[0034] The conditional parameters of the BT step are: source RF power: 500W, bias RF po...

Embodiment 2

[0042] The plasma processing process in this embodiment is a plasma etching process, using Figure 5 etching equipment shown, such as Figure 5 As shown, the difference from Embodiment 1 is that the air inlet channels of the etching equipment are distributed in the center and both sides of the upper part of the reaction chamber 1, including the central air inlet 2, the edge air inlet 3 and the air inlet 4, The gas flow rate entering each gas inlet can be controlled separately, so that the process gas can enter the reaction chamber according to a preset ratio, and the wafer is placed on the electrostatic chuck 5 . It should be noted here that the number of air inlets is only for describing this embodiment, but is not limited to this embodiment, and an actual device may include a plurality of air inlets, that is, air inlet passages.

[0043] For an etch process with multiple reactive gases, the process gases include O 2 , also including Cl 2 , HBr, He, CF 4 one or more of th...

Embodiment 3

[0046] The plasma processing technology and processing equipment of this embodiment are the same as those of Embodiment 1, but the air intake method of the ME step is different.

[0047] In the technical process of the ME step, the method for controlling the air intake mode of the present invention is adopted to make O 2 From the air inlet 2, at the same time, make the CL 2 , HBR, CF 4 It is combined and mixed before the intake, and it is passed through the intake port 3 and the intake port 4. like Image 6 shown, A means O 2 , B means CL 2 , HBR, CF 4 The mixed gas, the process gas of the A component is passed from the air inlet 2, and the process gas of the B component is passed from the air inlet 3 and the air inlet 4, so that through the above control, through the air inlet 2 and the air inlet 3 and the gas inlet 4 have different compositions of the process gas, that is, in order to make the composition of the process gas passing through at least two gas inlet passag...

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PUM

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Abstract

The invention discloses a method for controlling an air inlet way in a plasma processing technology, which aims to adjust the refinement of the processing technology and improve process results. By the method for controlling the air inlet way in the plasma processing process, in the plasma processing technology in which various gases are simultaneously used as process gases, the process gases are fed into a reaction cavity through a plurality of air inlet channels, and the components of the process gases which pass through all the air inlet channels are controlled so as to make the components of the process gases which pass through at least two air inlet channels different. The method can be used in the plasma processing technology.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for controlling an air intake mode in a plasma processing technology. Background technique [0002] In the manufacturing process of semiconductor devices, ie, microelectronic chips, plasma processing technology has been widely used. This process refers to the excitation of process gas to generate plasma under certain conditions, and the use of complex physical and chemical reactions between the plasma and the substrate (such as a silicon substrate) to complete various processes on the substrate, such as plasma etching process. , plasma thin film deposition process, etc., to obtain the desired semiconductor structure. [0003] figure 1 It is a schematic diagram of the structure of plasma processing equipment commonly used in the prior art, such as figure 1 As shown, a nozzle is installed on the upper part of the reaction chamber of the equipment, which is used...

Claims

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Application Information

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IPC IPC(8): H01L21/00
Inventor 张庆钊
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD