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A chemical mechanical polishing fluid

A chemical machinery, polishing liquid technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as reducing polishing pad friction, reduce friction, prolong service life, and improve operation. effects of the environment

Active Publication Date: 2017-02-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The technical problem to be solved by the present invention is to reduce and eliminate the polishing noise, improve the operating environment, reduce the friction of the polishing pad, and prolong the service life of the polishing pad

Method used

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  • A chemical mechanical polishing fluid
  • A chemical mechanical polishing fluid

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Embodiment Construction

[0024] The present invention is further illustrated below with examples, but the present invention is not limited thereto. In the following examples, the percentages are all mass percentages.

[0025] Polishing conditions: polishing machine mirra, 8-inch wafer (inch wafer), grinding pressure 4psi, polishing fluid flow rate 100ml / min.

[0026] Table 1 has provided the chemical mechanical polishing liquid embodiment 1~10 of the present invention and the formula of comparative example 1~2, by listed component and its content in table 1, mix in deionized water, use potassium hydroxide or Dilute nitric acid is adjusted to the required pH value to obtain chemical mechanical polishing fluid.

[0027] Table 1 chemical mechanical polishing liquid embodiment 1~12 and comparative example 1~2

[0028]

[0029]

[0030] It can be found from Comparative Example 1 and Comparative Example 2 that in the absence of the cationic surfactant of the present invention, no matter whether the ...

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Abstract

A chemical-mechanical polishing liquid is provided. The polishing liquid contains water, an abrasive, an oxidant and a water-soluble cationic surfactant. The present polishing liquid can reduce and eliminate the noises from polishing, improve the operating environment, decrease the friction of a polishing pad, and prolong the service life of the polishing pad.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid for tungsten, in particular to a chemical mechanical polishing liquid containing a cationic surfactant. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of interconnection layers in large-scale integrated circuits, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. In the 1980s, the chemical mechanical polishing (CMP) technology pioneered by IBM is considered to be the most effective method for global planarization. [0003] Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both. It usually consists of a grinding table with a polishing pad, and a grinding head for carrying chips. The grinding head holds the chip and presses the front side of the chip against the polishing pad. When chemical mechanica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C23F3/04
CPCC09G1/02C09K3/1463H01L21/3212
Inventor 王晨何华锋
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD