Manufacturing method of pixel structure
A manufacturing method and pixel structure technology, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problem of high cost of photomasks, inability to reduce the manufacturing cost of the pixel structure 90, and inability to effectively reduce the manufacturing cost of the pixel structure 90, etc. problem, to achieve the effect of low cost
Active Publication Date: 2011-06-15
AU OPTRONICS CORP
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Problems solved by technology
Since the cost of the photomask is very expensive, and each photomask process must use a photomask with different patterns, if the number of photomask processes cannot be reduced, the manufacturing cost of the pixel structure 90 will not be reduced.
[0006] In addition, as the size of thin film transistor liquid crystal display panels increases, the size of the photomask used to make the thin film transistor array substrate will also increase accordingly, and the large size photomask will be more expensive in cost, making the pixel structure The manufacturing cost of 90 cannot be effectively reduced
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[0052] Figure 2A ~ Figure 2G It is a schematic diagram of a manufacturing method of a pixel structure of the present invention. Please refer to Figure 2A Firstly, the substrate 200 is provided, and the material of the substrate 200 is, for example, hard or soft materials such as glass and plastic. Next, a first conductive layer 210 is formed on the substrate 200, wherein the first conductive layer 210 is formed by, for example, sputtering, evaporation or other thin film deposition techniques.
[0053] Next, if Figure 2B As shown, a first mask S1 is provided above the first conductive layer 210 , and the first mask S1 exposes a portion of the first conductive layer 210 , and a laser L is used to irradiate the first conductive layer 210 through the first mask S1 . In detail, the first conductive layer 210 irradiated by the laser L will absorb the energy of the laser L and be ablated from the surface of the substrate 200 . Specifically, the energy of the laser L used to pe...
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Abstract
The invention relates to a manufacturing method of a pixel structure. The method comprises the following steps: firstly, providing a substrate with a first conductive layer, then providing a first shade above the first conductive layer, and irradiating the first conductive layer by laser through the first shade so as to form a gate; forming a gate insulation layer on the substrate to cover the gate; simultaneously forming a channel layer, a source electrode and a drain electrode on the gate insulation layer above the gate, wherein the gate, the channel layer, the source electrode and the drain electrode form a thin film transistor; then forming a patterned protective layer on the thin film transistor and exposing part of the drain electrode; and finally forming a pixel electrode electrically connected to the drain electrode. According to the invention, a laser lift-off mode is utilized to manufacture the gate, thus the channel layer, the source electrode and the drain electrode are ensured to be manufactured simultaneously. Compared with the well-known manufacturing method of the pixel structure, the manufacturing method provided by the invention has the advantages that the process steps can be simplified, and the manufacturing cost of photomasks is reduced.
Description
[0001] This application is a divisional application of an invention patent application with a filing date of December 26, 2007, an application number of 200710305314.2, and an invention title of "Method for Making a Pixel Structure". technical field [0002] The present invention relates to a method for manufacturing a pixel structure, and in particular to a method for manufacturing a pixel structure using a laser ablation process to make a protective layer. Background technique [0003] A display is a communication interface between people and information, and flat-panel displays are currently the main development trend. There are mainly the following types of flat panel displays: organic electroluminescence display, plasma display panel, and thin film transistor liquid crystal display. Among them, thin film transistor liquid crystal display is the most widely used. Generally speaking, a thin film transistor liquid crystal display is mainly composed of a thin film transist...
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Login to View More IPC IPC(8): H01L21/84H01L21/768H01L21/336H01L21/28H01L21/268G02F1/1362
Inventor 方国龙杨智钧黄明远林汉涂石志鸿廖达文詹勋昌蔡佳琪
Owner AU OPTRONICS CORP