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Method and system for determining alignment precision matching between lithography machines

A technology of overlay accuracy and lithography machine, which is applied in the direction of microlithography exposure equipment, photolithography exposure device, etc., and can solve the problems that the overlay accuracy cannot be analyzed and determined

Active Publication Date: 2011-06-29
FOUNDER MICROELECTRONICS INT
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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a method and system for determining the matching of overlay accuracy between lithography machines, so as to solve the problem that the overlay accuracy measurement equipment equipped in the prior art cannot measure the overlay accuracy between lithography machines. Accuracy for analytically determined issues

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  • Method and system for determining alignment precision matching between lithography machines
  • Method and system for determining alignment precision matching between lithography machines
  • Method and system for determining alignment precision matching between lithography machines

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Embodiment Construction

[0023] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] figure 1 A method for determining the matching of overlay accuracy between lithography machines provided for an embodiment of the present invention, the method includes the following steps:

[0025] S101: The first photolithography machine performs a first-layer exposure on the silicon wafer according to the integrated circuit pattern on the photomask, wherein the integrated circuit pattern on the photomask includes at least one pair of measurement areas, and each pair of measurement areas is symmetrical to each other, Each measurement area includes a reference point and multiple measurement points.

[0026] S102: According to each first exposure point corresponding to each reference point and measurement point on the silicon wafer after the first layer of exposure, determine the relative distance between the first exposure point corresponding ...

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Abstract

The invention discloses a method and a system for determining alignment precision matching between lithography machines, which aim to solve the problem that the provided alignment precision measuring equipment cannot analyze and determine alignment precision between the lithography machines. In the method, when a first lithography machine performs first-layer exposure on a silicon wafer, a second lithography machine is moved according to coordinate difference between datum points in each pair of measurement regions on the silicon wafer which is subjected to the first-layer exposure; and the moved second lithography machine performs second-layer exposure on the silicon wafer, and the alignment precision quantity between the first lithography machine and the second lithography machine is determined according to the coordinate difference between each pair of measurement points in each pair of measurement regions on the silicon wafer which is subjected to the second-layer exposure. In the embodiment of the invention, the alignment precision quantity between the lithography machines is determined by acquiring the coordinates of the measurement points; and if the measurement points are several, the alignment precision quantity between the lithography machines can be determined accurately by accurately determining the coordinate difference between the measurement points.

Description

technical field [0001] The invention relates to the technical field of integrated circuit fabrication, in particular to a method and system for determining the matching of overlay precision between photolithography machines. Background technique [0002] In the process of semiconductor lithography, measuring and optimizing the overlay accuracy of products is very important to ensure product quality stability and improve product yield. In the integrated circuit manufacturing process, the overlay accuracy between different layers of the integrated circuit board has a great influence on the final product yield. Therefore, it is necessary to match the overlay accuracy between different exposure stations. [0003] At present, semiconductor manufacturing plants are generally equipped with overlay accuracy measurement equipment with relatively complete functions. When matching the overlay accuracy between different exposure stations, the overlay accuracy measurement equipment equi...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 罗明辉王文科吕学飞陈浩
Owner FOUNDER MICROELECTRONICS INT
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