Acoustic wave device

An elastic wave device and metal film technology, applied in impedance networks, electrical components, etc., can solve the problems of frequency variation, frequency characteristic deterioration, resistance increase, etc. Effect

Inactive Publication Date: 2011-06-29
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are problems that the resistance of the electrode fingers of the IDT electrode increases and the frequency characteristics deteriorate.
In addition, in the withstand power test, there is also the problem of frequency fluctuation caused by the diffusion of the Ti layer 106 to the Al layer 107 as described above.

Method used

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Embodiment Construction

[0051] Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention while referring to the accompanying drawings.

[0052] figure 1 (a) is a front sectional view showing the main part of the elastic wave device according to the first embodiment of the present invention, and (b) is a plan view showing the electrode structure thereof.

[0053] The elastic wave device 1 of the present embodiment is a surface acoustic wave device using surface acoustic waves.

[0054] The elastic wave device 1 has a piezoelectric substrate 2 and an IDT electrode 3 formed on the piezoelectric substrate 2 . In this embodiment, the piezoelectric substrate 2 is made of LiNbO 3 constitute. The piezoelectric substrate 2 can also be made of LiTaO 3 , Crystal and other piezoelectric single crystal formation. In addition, the piezoelectric substrate 2 may be formed of piezoelectric ceramics such as PZT.

[0055] Such as figure 1 As shown in (b), ...

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Abstract

The present invention provides an acoustic wave device, which can inhibit the increment of electric resistance and the deterioration of frequency characteristics, and inhibit the deterioration of power resistance test characteristics even if the acoustic device is placed under a high temperature. The acoustic device includes a piezoelectric substrate (2) and an IDT electrode (3) formed thereon. The IDT electrode (3) is formed by laminated metallic membrances by a plurality of metallic membrances, wherein the laminating metallic membrances have a first metallic membrance (3b) formed by AI or AI-based alloy, a second metallic membrance (3e) formed by metal or alloy other than that used in the first metallic membrance, and a Cu membrance (3c) and a Ti membrance (3d) disposed between the first and second metal metallic membrances, wherein the Cu membrance (3c) within the Cu membrance (3c) and the Ti membrance (3d) is configured on the first metallic membrance (3b) side.

Description

technical field [0001] The present invention relates to an elastic wave device used for, for example, a band filter and a resonator, and more specifically, to an elastic wave device in which an IDT electrode is composed of a laminated metal film including a metal film made of Al or an Al alloy. Background technique [0002] Currently, surface acoustic wave devices are widely used as filters and resonators in mobile communication equipment. [0003] For example, in the following patent document 1, it is disclosed that Figure 9 The surface acoustic wave element shown. In the surface acoustic wave element 101 , an electrode 103 is formed on a piezoelectric substrate 102 . The electrode 103 is formed by sequentially stacking a lower Ti layer 104, an intermediate metal layer 105 made of Mo or W or an alloy thereof, an upper Ti layer 106, and an upper conductive layer 107 made of Al or an Al alloy. Here, the lower Ti layer 104 has a thickness of 10 nm to 30 nm, the intermediate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25
CPCH03H9/14541
Inventor 玉崎大辅津田基嗣山崎央佐伯昌彦堀川晴信
Owner MURATA MFG CO LTD
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