Substrate processing apparatus and cleaning method thereof

Abstract

There is provided a substrate processing apparatus and a cleaning method thereof, capable of improving a removing rate of a deposit without increasing a self-bias voltage. The cleaning method includes supplying, to clean the inside of a processing chamber (102) under preset processing conditions, a processing gas including an O2 gas and an inert gas into the processing chamber at a preset flow rate ratio of the processing gas; and generating plasma of the processing gas by applying a high frequency power between a lower electrode (111) and a upper electrode (120). Here, the preset flow rate ratio of the processing gas is set depending on a self-bias voltage of the lower electrode 111 such that a flow rate ratio of the O2 gas is reduced while a flow rate ratio of the Ar gas is increased asan absolute value of the self-bias voltage decreases.

Description

technical field [0001] The present invention relates to a substrate processing apparatus, a cleaning method thereof, and a program-recorded recording medium in a cleaning processing chamber provided with a substrate mounting table for mounting substrates such as semiconductor wafers and FPD substrates. Background technique [0002] A substrate processing apparatus for manufacturing semiconductor devices is configured to include a mounting table for mounting substrates such as semiconductor wafers and liquid crystal substrates and a lower electrode, and a processing chamber provided with a processing chamber arranged to face the lower electrode. upper electrode. When plasma processing such as etching and film formation is performed in such a substrate processing apparatus, the substrate is placed and adsorbed and held on an electrostatic chuck or the like on a mounting table, a predetermined processing gas is introduced into the processing chamber, and Plasma is generated, w...

AI Technical Summary

Problems solved by technology

If the plasma treatment is repeated without leaving it alone, the deposits (such as CF copolymers) deposited in this way will continue to accumulate during the repeated plasma treatment, thus reducing the adsorption and retention force of the substrate on the stage or when the substrate is transported by the transfer arm. There is a problem that the position of the substrate deviates when it is placed on the stage

[0005] In addition, if particles adhere to the back surface of the substrate placed on the stage, the problem may increase in the next process.

Moreover, when particles remain in the processing chamber, they adhere to the substrate, which may affect the processing of the substrate, resulting in problems such as the inability to ensure the quality of the semiconductor device finally manufactured on the substrate.

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