Screening method for integrated circuit

Abstract

The invention relates to a screening method for an integrated circuit IC. The integrated circuit is formed by connecting a plurality of transistors on a wafer in parallel. The method comprises the following steps: applying bias voltage on the transistors; and capturing infrared light images of the transistors. The screening method disclosed by the invention has the advantages of high detection speed, automation and high detection accuracy.

Description

technical field [0001] The invention relates to a method for screening integrated circuits; in particular, it relates to a method for screening defective products of integrated circuits composed of transistors from the wafer stage and packaging stage in the semiconductor process by using the principle of infrared photothermal induction. Background technique [0002] One of the key electronic components of a handheld phone is the RF power amplifier, which usually consists of dozens of transistors connected in parallel to form a large transistor cell array to boost its output power. Currently, integrated circuits with such large transistor cell arrays are usually tested by means of in-line inspection and DC electronic probe testing during the wafer stage and packaging stage of the semiconductor manufacturing process to find defective products. However, these two methods have the following disadvantages in actual use: as far as online inspection is concerned, since only structu...

AI Technical Summary

Problems solved by technology

However, these two methods have the following disadvantages in actual use: as far as online inspection is concerned, since only structural defects can be inspected and the inspection speed is slow, they are not suitable for the detection of large-scale devices on the entire wafer; For DC electronic probe testing, when the detected integrated circuit is composed of many electronic components (such as transistors) connected in parallel, such as the above-mentioned RF power amplifier, since the probe cannot compare the DC magnification drift with the electronic components ( For example, the failure or open circuit of a transistor) is distinguished, so it is often misjudged as normal. Although the result of this misjudgment will not completely damage the integrated circuit in a short period of time, however, it will shorten the life cycle of the device for a long time. reduce its reliability

Therefore, it is impossible to effectively and thoroughly detect defective products only by using the above online inspection and DC electronic probe testing methods

Images