Resistance conversion storage nano-structure and self-aligning manufacturing method thereof
A resistance conversion and nanostructure technology, applied in nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems of low integration efficiency, rising manufacturing costs, and inability to complete logic switching operations, and achieves the The effect of opening low efficiency and resolving conflicts
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Embodiment 1
[0078] The invention discloses a resistive switching storage nanostructure with a gate tube and a self-alignment manufacturing method of the nanostructure.
[0079] Here, nanowires (or pillars) are taken as an example to illustrate nanostructures. Existing nanopillars are mostly single (single substance) materials, such as figure 1 The structure shown may be a nanowire (or pillar) of a phase change material, may be a nanowire (or pillar) of a semiconductor, or may be a nanowire (or pillar) of other single materials. Apparently, in figure 1 Among them, the shape of the section perpendicular to the page direction can be circular, rectangular, or other shapes, even irregular shapes, which are not limiting the content of the nanostructures of the present invention.
[0080] hereby figure 1 The nanowire shown is an example of a phase change material nanowire for illustration: the phase change material nanowire must have the ability of reversible phase change, for example, the cry...
Embodiment 2
[0089] Please refer to FIG. 3 , the present invention discloses a self-aligned manufacturing method of a resistive switching nanostructure with its own diode.
[0090] Figure 3AA mask 11 with a hollow structure 12 is covered on the substrate 10, an electrode layer 13 is provided above the bottom substrate of the hollow structure 12, and a metal lead wire may also be provided on the surface of the substrate below the electrode layer 13 as a word line. It can be manufactured by a semiconductor process, but it is not shown in the figure for the sake of brevity. Figure 3A The projection along the A-A direction in Figure 3B shown.
[0091] By electrochemical means, the substrate 10 with the mask is put into a specific electrochemical deposition solution, and the semiconductor layer 14 is selectively deposited in the hollow structure 12 by applying a voltage on the electrode layer, such as Figure 3C shown. The obtained semiconductor can be silicon-containing, germanium-conta...
Embodiment 3
[0097] In fact, in practical applications, the Figure 3B Among them, a word line 19 is required under the electrode 13, and a bit line 20 intersecting with the word line is required above the metal layer 18 (such as Figure 4A ), the intersection of the word line and the bit line is the 1D1R structure (1 diode + 1 phase-change storage resistor), Figure 4A The projection along the B-B direction in Figure 4B shown. The fabrication of this bitline can be obtained as Figure 3G The shown structure is then subjected to chemical mechanical polishing, and metal materials are deposited after polishing, and the bit line array 20 is manufactured by a conventional semiconductor process. The final top view of the structure is as follows Figure 4B As shown, it can be seen that the bit line array 20 needs to cover the 1D1R unit, and the word line 19 intersects the bit line 20 in the top view, and the place where the bit line and the word line intersect is the storage and gate unit. ...
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